S. Ašmontas, J. Gradauskas, V. Kazlauskaitė, A. Sužiedėlis, E. Sirmulis, M. Vingelis
{"title":"GaAs/AlGaAs异质结作为红外激光脉冲的快速探测器","authors":"S. Ašmontas, J. Gradauskas, V. Kazlauskaitė, A. Sužiedėlis, E. Sirmulis, M. Vingelis","doi":"10.1117/12.815954","DOIUrl":null,"url":null,"abstract":"We present experimental study of photoresponse in small area GaAs/AlGaAs heterojunction planar detector induced by nanosecond CO2 laser pulses. This device revealed itself as a fast IR sensor operating at room temperature. Hot carrier effects are proposed to be responsible for the photoresponse formation.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaAs/AlGaAs heterojunction as a fast detector of infrared laser pulses\",\"authors\":\"S. Ašmontas, J. Gradauskas, V. Kazlauskaitė, A. Sužiedėlis, E. Sirmulis, M. Vingelis\",\"doi\":\"10.1117/12.815954\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present experimental study of photoresponse in small area GaAs/AlGaAs heterojunction planar detector induced by nanosecond CO2 laser pulses. This device revealed itself as a fast IR sensor operating at room temperature. Hot carrier effects are proposed to be responsible for the photoresponse formation.\",\"PeriodicalId\":273853,\"journal\":{\"name\":\"International Conference on Advanced Optical Materials and Devices\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Advanced Optical Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.815954\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Advanced Optical Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.815954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs/AlGaAs heterojunction as a fast detector of infrared laser pulses
We present experimental study of photoresponse in small area GaAs/AlGaAs heterojunction planar detector induced by nanosecond CO2 laser pulses. This device revealed itself as a fast IR sensor operating at room temperature. Hot carrier effects are proposed to be responsible for the photoresponse formation.