M. Bawedin, S. Cristoloveanu, V. Dessard, Denis Flandre
{"title":"1T-Dram全耗尽SOI器件中动态浮体效应的实验与建模","authors":"M. Bawedin, S. Cristoloveanu, V. Dessard, Denis Flandre","doi":"10.1109/MIXDES.2007.4286125","DOIUrl":null,"url":null,"abstract":"We describe the transient floating-body mechanism which occurs in fully depleted SOI transistors and leads to a memory effect. A physics-based model for the potential variation with time is proposed and validated by numerical simulations. This model reproduces and clarifies the operation of the novel capacitor-less MSDRAM, the properties of which are discussed.","PeriodicalId":310187,"journal":{"name":"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Experiments and Modeling of Dynamic Floating Body Effects in 1T-Dram Fully Depleted SOI Devices\",\"authors\":\"M. Bawedin, S. Cristoloveanu, V. Dessard, Denis Flandre\",\"doi\":\"10.1109/MIXDES.2007.4286125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe the transient floating-body mechanism which occurs in fully depleted SOI transistors and leads to a memory effect. A physics-based model for the potential variation with time is proposed and validated by numerical simulations. This model reproduces and clarifies the operation of the novel capacitor-less MSDRAM, the properties of which are discussed.\",\"PeriodicalId\":310187,\"journal\":{\"name\":\"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIXDES.2007.4286125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIXDES.2007.4286125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experiments and Modeling of Dynamic Floating Body Effects in 1T-Dram Fully Depleted SOI Devices
We describe the transient floating-body mechanism which occurs in fully depleted SOI transistors and leads to a memory effect. A physics-based model for the potential variation with time is proposed and validated by numerical simulations. This model reproduces and clarifies the operation of the novel capacitor-less MSDRAM, the properties of which are discussed.
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