势垒高度对InGaN/(in)GaN多量子阱间载流子输运的影响

Laser Congress 2019 (ASSL, LAC, LS&C) Pub Date : 2019-09-29 DOI:10.1364/ASSL.2019.JW2A.27

S. Marcinkevičius, Rintat Yapparov, L. Kuritzky, S. Nakamura, J. Speck

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引用次数: 0

摘要

利用时间分辨光致发光技术研究了InGaN多量子阱中的载流子输运，该输运对LED和激光二极管的高效工作至关重要。在用InGaN取代GaN屏障的结构中，传输效率得到了显著提高。

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Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells

Interwell carrier transport, important for efficient LED and laser diode operation, was studied in InGaN multiple quantum wells by time-resolved photoluminescence. A strong increase in transport efficiency was achieved in structures in which GaN barriers were replaced with that of InGaN.

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Laser Congress 2019 (ASSL, LAC, LS&C)

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