{"title":"GaAs IGFET:一种高速数字集成电路的新器件","authors":"F. Schuermeyer, H.P. Singh, R. Scherer, D. Mays","doi":"10.1109/IEDM.1980.189861","DOIUrl":null,"url":null,"abstract":"GaAs IGFETs contain large interface state densities at midgap which, in the past have hindered the application of these devices in digital ICs. We have developed circuit techniques to charge these interface states such that the device operates in enhancement mode. These interface charges appear frozen at high frequencies. Ring oscillators and divide by two circuits were successfully fabricated and encouraging performance characteristics were observed. This presents the first reported demonstration of divide by two circuits using GaAs IGFET technology.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"386 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"GaAs IGFET: A new device for high speed digital ICs\",\"authors\":\"F. Schuermeyer, H.P. Singh, R. Scherer, D. Mays\",\"doi\":\"10.1109/IEDM.1980.189861\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaAs IGFETs contain large interface state densities at midgap which, in the past have hindered the application of these devices in digital ICs. We have developed circuit techniques to charge these interface states such that the device operates in enhancement mode. These interface charges appear frozen at high frequencies. Ring oscillators and divide by two circuits were successfully fabricated and encouraging performance characteristics were observed. This presents the first reported demonstration of divide by two circuits using GaAs IGFET technology.\",\"PeriodicalId\":180541,\"journal\":{\"name\":\"1980 International Electron Devices Meeting\",\"volume\":\"386 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1980.189861\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189861","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs IGFET: A new device for high speed digital ICs
GaAs IGFETs contain large interface state densities at midgap which, in the past have hindered the application of these devices in digital ICs. We have developed circuit techniques to charge these interface states such that the device operates in enhancement mode. These interface charges appear frozen at high frequencies. Ring oscillators and divide by two circuits were successfully fabricated and encouraging performance characteristics were observed. This presents the first reported demonstration of divide by two circuits using GaAs IGFET technology.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
