Wen-Chung Wang, H. Schachter, B. Elasir, Z.S. Wu, S. Onishi
{"title":"两对向表面声波诱导的薄膜半导体声电相互作用","authors":"Wen-Chung Wang, H. Schachter, B. Elasir, Z.S. Wu, S. Onishi","doi":"10.1109/T-SU.1985.31648","DOIUrl":null,"url":null,"abstract":"The nonlinear acoustoelectric interactions due to two con- tra-directed surface acoustic waves (SAW) for device geometries, consist- ing of semiconductor thin films, are analyzed in a unified and coherent manner. Main features of the nonlinear interactions to be addressed are biphased characteristics, signal enhancement, symmetry, and surface conditions. The geometries discussed are those utilizing the transverse, the normal and the tangential components of electric fields induced by two contra-directed SAW's through piezoelectric coupling. Experimental results are included. ARIOUS TYPES of acoustoelectric signal processors have been reported ( l)-(21). However, most of the structures discussed so far are with semiconductors of infinite thickness; i.e., larger than several Debye lengths. In this paper the nonlinear acoustoelectric interactions due to two contra- directed surface acoustic waves (SAW) for device geometries, particularly consisting of semiconductor thin films, are analyzed in a unified and coherent manner. Main features of the nonlinear interactions to be addressed are biphased characteristics, signal enhancement, symmetry, and surface conditions. Geometries to be discussed are those utilizing the transverse, the normal and the tangential components of electric fields induced by two contra-directed SAW's through piezoelectric coupling. Assuming that the surface acoustic waves are propagating in the z-direction, substrate surface is in the xz plane and the surface normal is in the y direction. Then, the transverse, normal, and tangential correspond to the directions of x, y, and z, respectively. In the transverse-mode operation, the nonlinear signal generation due to two contra-directed SAW's at both the sum and difference frequencies are zero in the absence of dc biasing due to the symmetry of the device","PeriodicalId":371797,"journal":{"name":"IEEE Transactions on Sonics and Ultrasonics","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Acoustoelectric Interactions in Thin-Film Semiconductors Induced by Two Contra-Directed Surface Acoustic Waves\",\"authors\":\"Wen-Chung Wang, H. Schachter, B. Elasir, Z.S. Wu, S. Onishi\",\"doi\":\"10.1109/T-SU.1985.31648\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The nonlinear acoustoelectric interactions due to two con- tra-directed surface acoustic waves (SAW) for device geometries, consist- ing of semiconductor thin films, are analyzed in a unified and coherent manner. Main features of the nonlinear interactions to be addressed are biphased characteristics, signal enhancement, symmetry, and surface conditions. The geometries discussed are those utilizing the transverse, the normal and the tangential components of electric fields induced by two contra-directed SAW's through piezoelectric coupling. Experimental results are included. ARIOUS TYPES of acoustoelectric signal processors have been reported ( l)-(21). However, most of the structures discussed so far are with semiconductors of infinite thickness; i.e., larger than several Debye lengths. In this paper the nonlinear acoustoelectric interactions due to two contra- directed surface acoustic waves (SAW) for device geometries, particularly consisting of semiconductor thin films, are analyzed in a unified and coherent manner. Main features of the nonlinear interactions to be addressed are biphased characteristics, signal enhancement, symmetry, and surface conditions. Geometries to be discussed are those utilizing the transverse, the normal and the tangential components of electric fields induced by two contra-directed SAW's through piezoelectric coupling. Assuming that the surface acoustic waves are propagating in the z-direction, substrate surface is in the xz plane and the surface normal is in the y direction. Then, the transverse, normal, and tangential correspond to the directions of x, y, and z, respectively. In the transverse-mode operation, the nonlinear signal generation due to two contra-directed SAW's at both the sum and difference frequencies are zero in the absence of dc biasing due to the symmetry of the device\",\"PeriodicalId\":371797,\"journal\":{\"name\":\"IEEE Transactions on Sonics and Ultrasonics\",\"volume\":\"79 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Sonics and Ultrasonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/T-SU.1985.31648\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Sonics and Ultrasonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/T-SU.1985.31648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Acoustoelectric Interactions in Thin-Film Semiconductors Induced by Two Contra-Directed Surface Acoustic Waves
The nonlinear acoustoelectric interactions due to two con- tra-directed surface acoustic waves (SAW) for device geometries, consist- ing of semiconductor thin films, are analyzed in a unified and coherent manner. Main features of the nonlinear interactions to be addressed are biphased characteristics, signal enhancement, symmetry, and surface conditions. The geometries discussed are those utilizing the transverse, the normal and the tangential components of electric fields induced by two contra-directed SAW's through piezoelectric coupling. Experimental results are included. ARIOUS TYPES of acoustoelectric signal processors have been reported ( l)-(21). However, most of the structures discussed so far are with semiconductors of infinite thickness; i.e., larger than several Debye lengths. In this paper the nonlinear acoustoelectric interactions due to two contra- directed surface acoustic waves (SAW) for device geometries, particularly consisting of semiconductor thin films, are analyzed in a unified and coherent manner. Main features of the nonlinear interactions to be addressed are biphased characteristics, signal enhancement, symmetry, and surface conditions. Geometries to be discussed are those utilizing the transverse, the normal and the tangential components of electric fields induced by two contra-directed SAW's through piezoelectric coupling. Assuming that the surface acoustic waves are propagating in the z-direction, substrate surface is in the xz plane and the surface normal is in the y direction. Then, the transverse, normal, and tangential correspond to the directions of x, y, and z, respectively. In the transverse-mode operation, the nonlinear signal generation due to two contra-directed SAW's at both the sum and difference frequencies are zero in the absence of dc biasing due to the symmetry of the device