{"title":"基于自限效应的微波x波段HEMT限制器分析","authors":"Z. Szczepaniak, A. Arvaniti","doi":"10.1109/EDMO.2004.1412393","DOIUrl":null,"url":null,"abstract":"In this paper the self-limiting effect in microwave limiters using transistors with Schottky junction was investigated. The mathematical analysis how the input power detection influences on output power characteristic was presented. The analysis was done on the basis of the transistor IV curves. The calculations and measurement results of a realized limiter circuit was also presented.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Analysis of microwave X-band HEMT limiters based on self-limiting effect\",\"authors\":\"Z. Szczepaniak, A. Arvaniti\",\"doi\":\"10.1109/EDMO.2004.1412393\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the self-limiting effect in microwave limiters using transistors with Schottky junction was investigated. The mathematical analysis how the input power detection influences on output power characteristic was presented. The analysis was done on the basis of the transistor IV curves. The calculations and measurement results of a realized limiter circuit was also presented.\",\"PeriodicalId\":424447,\"journal\":{\"name\":\"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.2004.1412393\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.2004.1412393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of microwave X-band HEMT limiters based on self-limiting effect
In this paper the self-limiting effect in microwave limiters using transistors with Schottky junction was investigated. The mathematical analysis how the input power detection influences on output power characteristic was presented. The analysis was done on the basis of the transistor IV curves. The calculations and measurement results of a realized limiter circuit was also presented.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
