采用门扩散输入的容错可逆全加法器设计

Somashekhar Malipatil, Avinash Gour, V. Maheshwari
{"title":"采用门扩散输入的容错可逆全加法器设计","authors":"Somashekhar Malipatil, Avinash Gour, V. Maheshwari","doi":"10.1109/ICSTCEE49637.2020.9276774","DOIUrl":null,"url":null,"abstract":"GDI technique allows minimization of area and power consumption of digital circuits. The reversible gate preserves same parity between output and input vectors is called fault tolerant but the dimension should be 3. In this design, Peres Gate is designed using Gate Diffusion Input using 8 transistors. The proposed new Peres Gate is used to design full adder with power efficient and fault tolerant. In this work power consumption 51.62μW is achieved for supply voltage 1V and the total area is 492μm2. The schematic is designed in DSCH 2 and layout is done in Microwind 2.","PeriodicalId":113845,"journal":{"name":"2020 International Conference on Smart Technologies in Computing, Electrical and Electronics (ICSTCEE)","volume":"221 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Fault Tolerant Reversible Full Adder Design Using Gate Diffusion Input\",\"authors\":\"Somashekhar Malipatil, Avinash Gour, V. Maheshwari\",\"doi\":\"10.1109/ICSTCEE49637.2020.9276774\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GDI technique allows minimization of area and power consumption of digital circuits. The reversible gate preserves same parity between output and input vectors is called fault tolerant but the dimension should be 3. In this design, Peres Gate is designed using Gate Diffusion Input using 8 transistors. The proposed new Peres Gate is used to design full adder with power efficient and fault tolerant. In this work power consumption 51.62μW is achieved for supply voltage 1V and the total area is 492μm2. The schematic is designed in DSCH 2 and layout is done in Microwind 2.\",\"PeriodicalId\":113845,\"journal\":{\"name\":\"2020 International Conference on Smart Technologies in Computing, Electrical and Electronics (ICSTCEE)\",\"volume\":\"221 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Smart Technologies in Computing, Electrical and Electronics (ICSTCEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSTCEE49637.2020.9276774\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Smart Technologies in Computing, Electrical and Electronics (ICSTCEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSTCEE49637.2020.9276774","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

GDI技术可以使数字电路的面积和功耗最小化。可逆门在输出和输入矢量之间保持相同的奇偶性称为容错,但维数应为3。在本设计中,Peres栅极采用栅极扩散输入,采用8个晶体管。提出的新Peres栅极用于设计低功耗、容错的全加法器。在此工作中,电源电压为1V时,功耗为51.62μW,总面积为492μm2。在dsch2中设计原理图,在Microwind 2中进行布局。
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Fault Tolerant Reversible Full Adder Design Using Gate Diffusion Input
GDI technique allows minimization of area and power consumption of digital circuits. The reversible gate preserves same parity between output and input vectors is called fault tolerant but the dimension should be 3. In this design, Peres Gate is designed using Gate Diffusion Input using 8 transistors. The proposed new Peres Gate is used to design full adder with power efficient and fault tolerant. In this work power consumption 51.62μW is achieved for supply voltage 1V and the total area is 492μm2. The schematic is designed in DSCH 2 and layout is done in Microwind 2.
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