MnIn2Te4单晶的基本光吸收边

16 January Pub Date : 1988-12-16 DOI:10.1002/PSSA.2211110131
G. A. Medvedkin, Y. Rud', M. Tairov
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引用次数: 17

摘要

研究了MnIn2Te4单晶(142m,缺陷锡石)沿(100)和(001)取向的基本吸收边区域的光学性质。当温度为77,300和370 K时,测得的能隙宽度分别为Eg = 1.55, 1.425和1.41 eV。在研究的整个温度范围内,在吸收边缘的陡峭度保持不变的情况下,建立了符合乌尔巴赫规则的α(h ω)光谱。晶体退火后的快速冷却使吸收边向外移动了50 meV,在T = 77 ~ 370 K的整个范围内α(h ω)的指数特征持续存在。分析表明,在基本边缘区域的光吸收是由与高晶格空位浓度相关的态密度尾巴和电子-声子相互作用的效应的总和所控制的。发现并研究了具有缺陷锡酸盐结构的MnIn2Te4晶体吸收边的光学线性二色性。研究发现,属于四方共晶的晶体,如MnIn2Te4 (142m)和CuInSe2, CuInTe2 (142d),具有弱的四方晶格变形τ≈0,与大多数τ > 0的黄铜矿相比,透光率为接近Eg的正线性二色性。在E⊥c极化中,MnIn2Te4中的最小直接跃迁是允许的,价带在Γ点的晶体分裂是正的。[忽略俄语文本]。
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Fundamental Optical Absorption Edge in MnIn2Te4 Single Crystals
The optical properties are studied in the region of the fundamental absorption edge of MnIn2Te4 single crystals (142m, defect stannite) oriented along (100) and (001). The width of the energy gap is measured to be Eg = 1.55, 1.425, and 1.41 eV, for the temperatures 77, 300, and 370 K, respectively. The α(ℏω) spectra are established to follow Urbach's rule throughout the temperature range studied, the steepness of the absorption edge remaining constant. Crystal annealing followed by fast cooling shifts the absorption edge longward by 50 meV, the exponential character of α(ℏω) persisting within the whole range T = 77 to 370 K. An analysis shows the optical absorption in the region of the fundamental edge to be governed by the sum of the effects of the density-of-states tails associated with a high concentration of lattice vacancies and of the electron-phonon interaction. The optical linear dichroism of the absorption edge of MnIn2Te4 crystals with defect stannite structure is discovered and studied. It is found that the crystals belonging to the tetragonal syngony, such as MnIn2Te4 (142m) and CuInSe2, CuInTe2 (142d), and exhibiting a weak tetragonal lattice deformation τ ≈ 0, reveal, in contrast to most chalcopyrites with τ > 0, a positive linear dichroism of transmittance close to Eg. Minimal direct transitions in MnIn2Te4 are allowed in the E ⊥ c polarization, the crystal splitting of the valence band at the Γ point being positive. [Russian Text Ignored].
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