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引用次数: 0
摘要
研究某些器件,特别是宽带隙器件在短路等恶劣条件下的可靠性和鲁棒性是一个重要问题。其中,碳化硅是目前在光伏、汽车电力电子等可再生能源变换器中占主导地位的功率开关器件之一。本文介绍了CREE SiC MOSFET在重复短路操作下的老化试验。详细介绍了实验结果。给出了老化前后的静电特性(漏极电流Id和栅源电压Vgs波)的演变。此外,还研究了重复短路老化对电学参数(阈值电压Vth、导通电阻Rdson和Igss栅极以及Idss漏极泄漏电流)的影响。
Evolution of Electrical Performance in First Generation of SiC MOSFET for Low Voltage Applications after Short-Circuit Aging Tests
Studying the reliability and robustness of some components, in particular wide band gap (WBG) devices, under severe conditions such as short-circuits, is an important issue. Among this WBG is the SiC, which is presently one of the dominant power switching devices in renewable energy converters such as photovoltaic and automotive power electronic converters. This paper presents aging tests of SiC MOSFET from CREE subjected to repetitive short-circuit operations. The experimental tests are detailed. The evolution of the electrical static characterizations (drain current Id and gate-source voltage Vgs waves), before and after aging, is presented. Furthermore, the repetitive short-circuit aging effect on electrical parameters (threshold voltage Vth, on-state resistance Rdson and Igss gate and Idss drain leakage currents) is carried out.