Shu-rui Cao, Qingkui Yu, He Wang, Yi Sun, He Lv, B. Mei, Morigen, Pengwei Li, Hongwei Zhang, M. Tang
{"title":"高能质子对碳化硅结势垒肖特基二极管的辐射效应","authors":"Shu-rui Cao, Qingkui Yu, He Wang, Yi Sun, He Lv, B. Mei, Morigen, Pengwei Li, Hongwei Zhang, M. Tang","doi":"10.1109/ICICM50929.2020.9292288","DOIUrl":null,"url":null,"abstract":"Silicon Carbide (SiC) Junction Barrier Schottky Diodes (JBS Diodes) were exposed to 50MeV and 90MeV protons up to a fluence of $5\\times 10^{10}\\text{cm}^{-2}$. During irradiation, the reverse leakage current decreased with the accumulation of fluence and no SEB occurred. By comparing the electrical characteristics before and after irradiation, it was analyzed that leakage current decreasing was related to the increase of barrier height and the reduction of carrier concentration. It was considered that no SEB occurring was associated with the lower proton fluence and biased voltage.","PeriodicalId":364285,"journal":{"name":"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Radiation Effects on Silicon Carbide Junction Barrier Schottky Diodes Caused by High Energy Proton\",\"authors\":\"Shu-rui Cao, Qingkui Yu, He Wang, Yi Sun, He Lv, B. Mei, Morigen, Pengwei Li, Hongwei Zhang, M. Tang\",\"doi\":\"10.1109/ICICM50929.2020.9292288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon Carbide (SiC) Junction Barrier Schottky Diodes (JBS Diodes) were exposed to 50MeV and 90MeV protons up to a fluence of $5\\\\times 10^{10}\\\\text{cm}^{-2}$. During irradiation, the reverse leakage current decreased with the accumulation of fluence and no SEB occurred. By comparing the electrical characteristics before and after irradiation, it was analyzed that leakage current decreasing was related to the increase of barrier height and the reduction of carrier concentration. It was considered that no SEB occurring was associated with the lower proton fluence and biased voltage.\",\"PeriodicalId\":364285,\"journal\":{\"name\":\"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICM50929.2020.9292288\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICM50929.2020.9292288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Radiation Effects on Silicon Carbide Junction Barrier Schottky Diodes Caused by High Energy Proton
Silicon Carbide (SiC) Junction Barrier Schottky Diodes (JBS Diodes) were exposed to 50MeV and 90MeV protons up to a fluence of $5\times 10^{10}\text{cm}^{-2}$. During irradiation, the reverse leakage current decreased with the accumulation of fluence and no SEB occurred. By comparing the electrical characteristics before and after irradiation, it was analyzed that leakage current decreasing was related to the increase of barrier height and the reduction of carrier concentration. It was considered that no SEB occurring was associated with the lower proton fluence and biased voltage.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
