氧化铝阱分布与真空中表面闪络性能的关系

C.R. Li, L. Ding, J.Z. Lu
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引用次数: 40

摘要

利用热刺激电流(TSC)测定了在不同烧结温度和不同添加剂条件下制备的氧化铝陶瓷样品中的陷阱密度和陷阱能量。在真空条件下,施加负脉冲电压(0.7/4 /spl mu/s)后,氧化铝表面电荷的变化以及材料在真空条件下的闪络性能。我们发现氧化铝中的陷阱分布与真空中表面电荷和闪络性能有关。结果表明,材料中的陷阱密度越高,表面电荷密度越高,氧化铝表面的闪络电压越低。认为载流子的捕获和释放机制与二次电子发射机制一起在放电过程的发展中起着重要的作用。
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The relation of trap distribution of alumina with surface flashover performance in vacuum
Alumina ceramic samples prepared under different sintering temperatures and varied additives were measured to indicate the trap density and trap energy located in alumina materials by using thermally stimulated current (TSC). The surface charges on alumina in vacuum after applying a negative pulse voltage (0.7/4 /spl mu/s), and flashover performances of the materials in vacuum also were measured. We found that the trap distribution in alumina has a correlation with surface charges and flashover performances in vacuum. It is shown that the higher is the trap density in the material, the higher is the surface charge density, and the lower is the flashover voltage on alumina surface. It is believed that the trapping and de-trapping mechanisms of carriers could play an important role during the development of the discharge processes, together with the secondary electron emission mechanism.
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