{"title":"一种反馈GaN HEMT振荡器","authors":"S. Jang, Yung-Han Chang, W. Lai","doi":"10.1109/ICMMT.2018.8563459","DOIUrl":null,"url":null,"abstract":"This letter studies a feedback GaN HEMT oscillator implemented with the WIN $0.255{\\mu m}$ GaN HEMT technology. The oscillator consists of a HEMT amplifier with an LC feedback network. With the supply voltage of $\\text{V}_{\\text{DD}} =1.8\\ \\text{V}$, the GaN VCO current and power consumption of the oscillator are 10.18 mA and 18.33mW, respectively. The oscillator can generate single-ended signal at 7.26GHz and it also supplies output power 1.06 dBm. At 1MHz frequency offset from the carrier the phase noise is −122.48 dBc/Hz. The die area of the GaN HEMT oscillator is $2\\times 1\\ \\text{mm}^{2}$.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A Feedback GaN HEMT Oscillator\",\"authors\":\"S. Jang, Yung-Han Chang, W. Lai\",\"doi\":\"10.1109/ICMMT.2018.8563459\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter studies a feedback GaN HEMT oscillator implemented with the WIN $0.255{\\\\mu m}$ GaN HEMT technology. The oscillator consists of a HEMT amplifier with an LC feedback network. With the supply voltage of $\\\\text{V}_{\\\\text{DD}} =1.8\\\\ \\\\text{V}$, the GaN VCO current and power consumption of the oscillator are 10.18 mA and 18.33mW, respectively. The oscillator can generate single-ended signal at 7.26GHz and it also supplies output power 1.06 dBm. At 1MHz frequency offset from the carrier the phase noise is −122.48 dBc/Hz. The die area of the GaN HEMT oscillator is $2\\\\times 1\\\\ \\\\text{mm}^{2}$.\",\"PeriodicalId\":190601,\"journal\":{\"name\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2018.8563459\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2018.8563459","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This letter studies a feedback GaN HEMT oscillator implemented with the WIN $0.255{\mu m}$ GaN HEMT technology. The oscillator consists of a HEMT amplifier with an LC feedback network. With the supply voltage of $\text{V}_{\text{DD}} =1.8\ \text{V}$, the GaN VCO current and power consumption of the oscillator are 10.18 mA and 18.33mW, respectively. The oscillator can generate single-ended signal at 7.26GHz and it also supplies output power 1.06 dBm. At 1MHz frequency offset from the carrier the phase noise is −122.48 dBc/Hz. The die area of the GaN HEMT oscillator is $2\times 1\ \text{mm}^{2}$.
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