功率半导体器件的建模，问题，限制和未来趋势

5th IEEE Workshop on Computers in Power Electronics Pub Date : 1996-08-11 DOI:10.1109/CIPE.1996.612346

B. Fatemizadeh, P. Lauritzen, D. Siber

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引用次数: 12

摘要

综述了功率器件建模中存在的问题和未来的发展趋势，并比较了不同的建模方法在实现物理效果的方便性、准确性、数值效率和准确性之间的折衷。列举了许多现有的功率器件型号，并对其主要特点进行了识别和比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling of power semiconductor devices, problems, limitations and future trends

The problems and future trends of the modeling of power devices are reviewed and the different modeling methods compared as to their compromise between convenience, accuracy, numerical efficiency and accuracy in implementing physical effects. Many of the existing power device models are listed, and their main features are identified and compared.

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5th IEEE Workshop on Computers in Power Electronics

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