在深紫外发光二极管量子势垒中插入未掺杂的薄海藻层抑制效率下降

2021 Conference on Lasers and Electro-Optics (CLEO) Pub Date : 2021-05-01 DOI:10.1364/cleo_at.2021.af2r.6

Hongfeng Jia, Huabin Yu, Z. Ren, Chong Xing, Zhongling Liu, Yang Kang, Haiding Sun

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摘要

我们提出了一种带工程量子势垒(qb)的DUV LED器件架构，作为抑制电子泄漏和促进电子和空穴注入效率的替代方法，以实现高效的辐射重组。

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Suppression of Efficiency Droop by Inserting a Thin Undoped AlGaN Layer into Each Quantum Barrier in AlGaN-Based Deep-Ultraviolet Light-Emitting Diode

We propose a DUV LED device architecture with band-engineered quantum barriers (QBs) to "serve" as an alternative approach to suppress the electron leakage and facilitate the electron and hole injection efficiency for efficient radiative recombination.

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2021 Conference on Lasers and Electro-Optics (CLEO)

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