电场和发射电流对碳纳米管层中纳米管结构的影响

N. Kiselev, A. L. Musatov, J. Hutchison, O. Zhigalina, E. Kukovitskiǐ, V. Artemov, Y. Grigoriev, K. R. Izrael’yants, S. L’vov
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摘要

在Ni箔上CVD生长的碳纳米管(NT)层表现出低电压场电子发射特性,场放大系数β值在1000 ~ 4000之间。研究了电场(Eav)、发射电流(IFE)和曝光时间对镍箔边缘CVD生长的锥形层碳纳米管结构的影响。透射电镜成像显示,纳米碳管的边缘表面有大量的纳米碳管,而在纳米碳管层的外表面,则观察到单个的、无取向的、开放的、没有催化颗粒的纳米碳管。在足够的电场作用后,许多纳米管都朝向阳极,但其中一两个纳米管总是延伸几微米。原位SEM研究表明,当Eav = 3.2 - 3.9 V/mum时,以原有的自由NTs端为代价实现了发射。配置更改从较高的应用字段开始。在观察到的箔边缘长度(14.6 - 17.8 μ m)和边缘厚度为200 μ m的情况下,有一两个纳米管向阳极延伸,可能成为主发射体。当电场进一步增大到Eav= 5.7 - 8 V/mum, IFE=2times10- 5a时,这些管消失(或基本上缩短)。在Eav = 8 V/mum及更高时,曝光时间长达40 min,出现了数十个延长的nt,其中一个或两个明显超过其他nt。这种NT结构模式可能与NT之间的静电屏蔽有关。结果表明,在所研究的Eav和IFE范围内,随着Eav、IFE和暴露时间的增加,纳米管的发射数量有限,且不断发生变化
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The influence of electric field and emission current on the configuration of nanotubes in carbon nanotubes layers
Carbon nanotube (NT) layers grown by CVD on Ni foil demonstrated low voltage characteristics of field electron emission: the value of the field amplification coefficient beta was in the range 1000-4000. The influence of electric field (Eav), emission current (IFE ) and exposure time on the configuration of conical-layer carbon nanotubes grown by CVD on the edge of a Ni foil has been investigated. TEM profile imaging revealed a significant concentration of NTs close to the edge surface, whereas on the NTs layers' outer surfaces single, non-oriented NTs with open ends free of catalytic particles, were observed. After sufficient electric field application many NTs become oriented towards the anode, but one or two of them were always a few microns more extended. In-situ SEM investigation showed that below Eav = 3.2 - 3.9 V/mum, emission was achieved at the expense of originally existing free NTs ends. Configuration changes began at the higher applied fields. On the observed foil edge length (14.6 - 17.8 mum) and the edge thickness 200 mum one or two NTs extended towards the anode and probably become main emitters. On further increasing the field to Eav= 5.7 - 8 V/mum and at IFE=2times10-5 A these tubes disappeared (or essentially shortened). At Eav = 8 V/mum and higher, and at an exposure time of up to 40 min, several tens of extended NTs appeared with one or two extended significantly beyond the others. This NT configuration pattern is probably connected with electrostatic screening between the NTs. It is suggested that in the range of Eav and IFE that was investigated, a limited number of NTs were emitting and these nanotubes were constantly changing as Eav, IFE and exposure time increase
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