{"title":"深杂质硅试样变形灵敏度分量的计算","authors":"R. Khamidov, O. O. Mamatkarimov","doi":"10.37681/2181-1652-019-x-2021-4-8","DOIUrl":null,"url":null,"abstract":"In this paper presents that samples of sili con with acceptor impurities have a greater static and lower dynamic strain sensitivity than silicon samples with donor and amphoteric impurities. And samples of silicon with ampho teric impurities, almost does not have static components of strain sensitivity at pulse hydrostati c pressure. In such samples, the strain sensitivity is related only to the temperature and relaxation effects","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS\",\"authors\":\"R. Khamidov, O. O. Mamatkarimov\",\"doi\":\"10.37681/2181-1652-019-x-2021-4-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper presents that samples of sili con with acceptor impurities have a greater static and lower dynamic strain sensitivity than silicon samples with donor and amphoteric impurities. And samples of silicon with ampho teric impurities, almost does not have static components of strain sensitivity at pulse hydrostati c pressure. In such samples, the strain sensitivity is related only to the temperature and relaxation effects\",\"PeriodicalId\":153395,\"journal\":{\"name\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"volume\":\"118 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.37681/2181-1652-019-x-2021-4-8\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37681/2181-1652-019-x-2021-4-8","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS
In this paper presents that samples of sili con with acceptor impurities have a greater static and lower dynamic strain sensitivity than silicon samples with donor and amphoteric impurities. And samples of silicon with ampho teric impurities, almost does not have static components of strain sensitivity at pulse hydrostati c pressure. In such samples, the strain sensitivity is related only to the temperature and relaxation effects
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