T. Santini, Morand Sebastien, Miller Florent, L. Phung, B. Allard
{"title":"用于高温航空应用的SiC MOSFET栅极氧化物可靠性评估","authors":"T. Santini, Morand Sebastien, Miller Florent, L. Phung, B. Allard","doi":"10.1109/ECCE-ASIA.2013.6579125","DOIUrl":null,"url":null,"abstract":"With the trend toward more electrical aircraft, Silicon Carbide power switches could be heavily used for high temperatures applications within the aircraft. The assessment of the reliability of such power electronic components is a key element for the qualification process. In this study we focused on the reliability of the MOSFET gate oxide which is known to be the more fragile part of these components.","PeriodicalId":301487,"journal":{"name":"2013 IEEE ECCE Asia Downunder","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":"{\"title\":\"Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications\",\"authors\":\"T. Santini, Morand Sebastien, Miller Florent, L. Phung, B. Allard\",\"doi\":\"10.1109/ECCE-ASIA.2013.6579125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the trend toward more electrical aircraft, Silicon Carbide power switches could be heavily used for high temperatures applications within the aircraft. The assessment of the reliability of such power electronic components is a key element for the qualification process. In this study we focused on the reliability of the MOSFET gate oxide which is known to be the more fragile part of these components.\",\"PeriodicalId\":301487,\"journal\":{\"name\":\"2013 IEEE ECCE Asia Downunder\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"38\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE ECCE Asia Downunder\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCE-ASIA.2013.6579125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE ECCE Asia Downunder","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCE-ASIA.2013.6579125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications
With the trend toward more electrical aircraft, Silicon Carbide power switches could be heavily used for high temperatures applications within the aircraft. The assessment of the reliability of such power electronic components is a key element for the qualification process. In this study we focused on the reliability of the MOSFET gate oxide which is known to be the more fragile part of these components.
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