高绝缘高频变压器寄生电容对串联谐振变换器的影响分析及优化设计

Ren-Chu Guan, Zhixing He, Zongjian Li, Ben Zhou, Yang Liu, Junjie Qin, YuanYuan Xiao, Ruxin Liang, Chengjun Duan
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引用次数: 0

摘要

串联谐振变换器(SRC)是最流行的电隔离dc-dc变换器之一,因为它提供零电压开关(ZVS),减小均方根电流,使用变压器漏感作为谐振电感可以进一步减小变换器的体积。然而,在中压(MV)电网到低压(LV)直流母线的应用中,为了满足变压器的高绝缘强度和高功率要求,寄生电容较大,造成谐振电压和电流振荡尖峰。建立了等效电路,建立了谐振电压和电流在时域的数学表达式,并分析了瞬态过程中的不利影响。分析比较了不同寄生电容和死区时间对振荡的影响,给出了设计参考。实验验证了基于SiC mosfet的样机的理论计算,该样机的直流输入为2kV,输出为800V,绝缘为10kVDC,输出功率为4kW,工作频率为200kHz,效率为98.5%。实验对比表明,该方法将电压、电流振荡消失尖峰值降低到稳态值的1.3倍。
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Impact Analysis of Parasitic Capacitance of High-Insulation High-Frequency Transformer on Series Resonant Converter and Optimal Design
The series resonant converter (SRC) is one of the most popular galvanically isolated dc–dc converters since it provides zero voltage switching (ZVS), reduces rms currents, using transformer leakage inductance as the resonant inductance can further reduce the volume of the converter. However, in medium-voltage (MV) grid to low-voltage (LV) DC bus applications, in order to meet the transformer's high insulation strength and high power requirements, the parasitic capacitance is large, causing resonance voltage and current oscillations spikes. The equivalent circuit is established, the mathematical expression of the resonant voltage and current in the time domain is established, and the adverse effects in the transient process are analyzed. The influence of different parasitic capacitance and dead time on oscillation is analyzed and compared, and design reference is given. Theoretical calculations is experimentally verified for the SiC MOSFET-based prototype of a 2kV DC input, 800V output, 10kVDC insulation, 4kW power output, which operates at 200kHz, with an efficiency of 98.5%. Experimental comparison shows that the proposed method reduces the voltage and current oscillation disappeared spikes from 1.3 times the steady-state value.
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