J. Rousset, Y. Harkouss, J. Collantes, M. Campovecchio
{"title":"用于互调制和功率分析的FET精确神经网络模型","authors":"J. Rousset, Y. Harkouss, J. Collantes, M. Campovecchio","doi":"10.1109/EUMA.1996.337633","DOIUrl":null,"url":null,"abstract":"An accurate nonlinear FET model based on a Neural Network representation of the drain current source has been developed to predict intermodulation distortion as well as output power performance. This new neural network model has been implemented in a commercial harmonic balance simulator and its efficiency is evidenced by a comparison with an empirical model (Tajima). The accuracy of the proposed model is verified by active load-pull measurements on a Texas HFET at 10 GHz.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"An accurate neural network model of FET for intermodulation and power analysis\",\"authors\":\"J. Rousset, Y. Harkouss, J. Collantes, M. Campovecchio\",\"doi\":\"10.1109/EUMA.1996.337633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An accurate nonlinear FET model based on a Neural Network representation of the drain current source has been developed to predict intermodulation distortion as well as output power performance. This new neural network model has been implemented in a commercial harmonic balance simulator and its efficiency is evidenced by a comparison with an empirical model (Tajima). The accuracy of the proposed model is verified by active load-pull measurements on a Texas HFET at 10 GHz.\",\"PeriodicalId\":219101,\"journal\":{\"name\":\"1996 26th European Microwave Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 26th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1996.337633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 26th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1996.337633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An accurate neural network model of FET for intermodulation and power analysis
An accurate nonlinear FET model based on a Neural Network representation of the drain current source has been developed to predict intermodulation distortion as well as output power performance. This new neural network model has been implemented in a commercial harmonic balance simulator and its efficiency is evidenced by a comparison with an empirical model (Tajima). The accuracy of the proposed model is verified by active load-pull measurements on a Texas HFET at 10 GHz.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
