具有有源宽带输入平衡的低功率高线性无电感超宽带CMOS混频器

Hossein Kassiri B, M. Deen
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引用次数: 6

摘要

提出了一种用于超宽带应用的低功耗、高线性CMOS双平衡混频器。该混频器是基于众所周知的折叠架构设计的,并且还受益于RF(射频)和LO(本地振荡器)级的直流隔离。在射频级的设计中,采用了堆叠NMOS-PMOS升压拓扑结构。为了达到非常低的功耗,这个阶段在亚阈值区域偏置。此外,还设计和制造了一个超宽带有源平衡器来产生差分输入。该平衡器被单独表征,其性能被单独或与混合器一起报道。该设计采用130 nm CMOS工艺实现,工作频率为3.1至10.6 GHz。测得的最大转换增益为14.9 dB。此外,测量到的双边带噪声系数对于混频器核心具有7.8 dB的最小值,当添加平衡时为12.9 dB。输入(RF和LO)端口匹配实现了整个频段的反射大于10 dB。此外,还测量了端口到端口的隔离,显示了端口之间的良好隔离。测量的IIP3作为线性性能的良好指标也有报道,并显示出良好的线性,这是设计中使用的技术的结果。在1.2 V电源下,混频器的核心面积为0.056 mm2,功耗为623 μW。
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Low power highly linear inductorless UWB CMOS mixer with active wideband input balun
A low-power, highly linear CMOS double-balanced mixer for UWB applications is presented. The mixer is designed based on well-known folded architecture and also benefits from DC isolation of RF (Radio Frequency) and LO (Local Oscillator) stages. Stacked NMOS-PMOS gm-boosting topology is used in the design of RF stage. To achieve very low power consumption, this stage is biased in sub-threshold region. Also an ultra-wideband active balun is designed and fabricated to generate differential inputs. The balun is separately characterized and its performance is reported both separately and together with the mixer. The design is implemented using 130 nm CMOS process and is operational from 3.1 to 10.6 GHz. The measured maximum conversion gain shows high value of 14.9 dB for the mixer core. Also, the measured double sideband noise figure has a minimum value of 7.8 dB for the mixer core and 12.9 dB when balun is added. Input (RF and LO) port matching is achieved with reflection of more than 10 dB for the entire band. Furthermore, port-to-port isolation is measured that shows excellent isolation between ports. Measured IIP3 as a good indication of linearity performance is also reported and shows excellent linearity that is a result of techniques used in the design. Finally the mixer core area is measured to be 0.056 mm2 with power dissipation of 623 μW from a 1.2 V supply.
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