化学蚀刻法制备微纳抗反射结构

C. Rong, X. Gu, W.P. Liu, W. Zhang, F. Zhang, L. Yuan, Y. Y. Wang, C. Peng
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引用次数: 1

摘要

采用化学刻蚀法制备了单晶硅的周期性金字塔和无序纳米二元结构。这种结构的硅片的反射率比单金字塔阵列的反射率要低得多。研究了这些结构的形貌和反射率,以及快速热退火(RTA)时间和温度对纳米结构的影响。在优化条件下,平均反射率为1.97%。
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Fabrication of micro- and nano- structures for antireflection by chemical etching method
Periodic pyramid and random nanostructure binary structures of single-crystal silicon wafer was fabricated by chemical etching method. Much lower reflectance of silicon wafer with these structures was obtained compared with that of single pyramid arrays. The morphology and reflectivity of these structures, as well as the influence on nanostructures caused by rapid thermal annealing (RTA) time and temperature of gold film, were studied. An average reflectance of 1.97% was obtained under optimized condition.
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