基于器件仿真的单凹槽GaAs pHEMT工艺稳定性及灵敏度分析

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EMICC.2008.4772227

Peter Abele, Michael Schäfer, J. Splettstößer, Martin Thinnes, Hermann Stieglauer, Dag Behammer

{"title":"基于器件仿真的单凹槽GaAs pHEMT工艺稳定性及灵敏度分析","authors":"Peter Abele, Michael Schäfer, J. Splettstößer, Martin Thinnes, Hermann Stieglauer, Dag Behammer","doi":"10.1109/EMICC.2008.4772227","DOIUrl":null,"url":null,"abstract":"In this work we investigate device simulations for a sensitivity analyses on the PH25 single recess pHEMT process. The relation of the most critical process and epitaxial parameters on the electrical DC parameters are presented and discussed. The control of the recess etching is an important process module in stabilizing the electrical parameters. Improving the recess etching resulted in a significant reduced spread of the electrical parameters.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Process Stabilization and Sensitivity Analyses of a Single Recess GaAs pHEMT Process using Device Simulations\",\"authors\":\"Peter Abele, Michael Schäfer, J. Splettstößer, Martin Thinnes, Hermann Stieglauer, Dag Behammer\",\"doi\":\"10.1109/EMICC.2008.4772227\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we investigate device simulations for a sensitivity analyses on the PH25 single recess pHEMT process. The relation of the most critical process and epitaxial parameters on the electrical DC parameters are presented and discussed. The control of the recess etching is an important process module in stabilizing the electrical parameters. Improving the recess etching resulted in a significant reduced spread of the electrical parameters.\",\"PeriodicalId\":344657,\"journal\":{\"name\":\"2008 European Microwave Integrated Circuit Conference\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2008.4772227\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772227","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在这项工作中，我们研究了PH25单凹槽pHEMT过程的灵敏度分析的装置模拟。提出并讨论了最关键的工艺参数和外延参数对直流电参数的影响。凹槽刻蚀的控制是稳定电学参数的重要工艺模块。改进凹槽刻蚀可以显著降低电学参数的扩散。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Process Stabilization and Sensitivity Analyses of a Single Recess GaAs pHEMT Process using Device Simulations

In this work we investigate device simulations for a sensitivity analyses on the PH25 single recess pHEMT process. The relation of the most critical process and epitaxial parameters on the electrical DC parameters are presented and discussed. The control of the recess etching is an important process module in stabilizing the electrical parameters. Improving the recess etching resulted in a significant reduced spread of the electrical parameters.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 European Microwave Integrated Circuit Conference

自引率

0.00%

发文量