Ravindra Kumar Maurya, Vivek Kumar, R. Saha, B. Bhowmick
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Effects of Ferro-thickness and Temperature on Electrical Performance of Si:HfO2 based NC-FinFET
In this paper, the temperature effect on Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structured negative capacitance fin field effect transistor (NC-FinFET) Silicon doped HfO2 (Si:HfO2) is analyzed. The simulation is carried out in Sentaurus TCAD and various characteristics are extracted. With the incorporation of FE layer, the ION is increased by 1.5 times compared to baseline FinFET and SS is achieved as 53 mV/dec. The device provides a high transconductance (gm) of 5 mS at Vgs = 0.95 V. These parameters viz. SS, ION and gm etc. has been analyzed with varying temperature (250 K - 350 K with step 50 K).
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