数字片上电压和温度传感器老化效应的评估和缓解

M. Altieri, S. Lesecq, D. Puschini, O. Héron, E. Beigné, J. Rodas
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引用次数: 4

摘要

在能源限制下,电源效率是高性能嵌入式系统面临的巨大挑战。为了满足这些相互冲突的目标,通常采用细粒度动态电压和频率缩放方法。此外,如果对动态变化进行局部和实时监测,这些技术可以得到改进。最近开发了一种低成本的片上通用传感器,结合了适当的数据融合技术,以监测局部温度和电压条件。然而,随着技术规模低于40纳米,可靠性已成为主要问题。老化变化不再是可以忽略不计的,必须在监视器的设计和运行中加以考虑。本文回顾了28nm意法半导体技术中BTI和HCI老化效应下的传感器。提出了一种简单的再标定方法,以减轻老化对VT估计的影响。
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Evaluation and mitigation of aging effects on a digital on-chip voltage and temperature sensor
Power efficiency is a tremendous challenge for high performance embedded systems under energy constraints. Fine grain Dynamic Voltage and Frequency Scaling approaches are usually implemented in order to meet these conflicting objectives. Moreover, these techniques can be improved if local and on-the-fly monitoring of the dynamic variations is performed. A low-cost onchip general purpose sensor associated with an appropriate data fusion technique has been recently developed in order to monitor local temperature and voltage conditions. However, reliability has become a major concern as the technology scales below 40nm. The aging variation is not anymore negligible and must be taken into account during the monitor design and operation. This paper revisits such a sensor under both BTI and HCI aging effects in 28nm STMicroelectronics technology. A simple recalibration method is also proposed to mitigate the aging effects on the VT estimation.
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