{"title":"具有后势垒的p-GaN栅极增强模式HEMT的性能评价","authors":"Sreelekshmi P. S., Jobymol Jacob","doi":"10.1109/ICITIIT54346.2022.9744205","DOIUrl":null,"url":null,"abstract":"The effect of InGaN and p-GaN back barrier layers on the electrical characteristics of a p-GaN gate based enhancement mode HEMT is investigated in this work. A comparative analysis on the performance of back barrier based HEMT, with that of a conventional device is performed. The impact of mole fraction and doping of back barrier on device behaviour is analysed. The scope of back barrier design on device threshold voltage engineering is highlighted. The insertion of back barrier layer helps to increase carrier confinement and can be suitably adopted as a solution for short channel effects found in scaled devices.","PeriodicalId":184353,"journal":{"name":"2022 International Conference on Innovative Trends in Information Technology (ICITIIT)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance Evaluation of p-GaN Gate Enhancement Mode HEMT with Back Barriers\",\"authors\":\"Sreelekshmi P. S., Jobymol Jacob\",\"doi\":\"10.1109/ICITIIT54346.2022.9744205\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of InGaN and p-GaN back barrier layers on the electrical characteristics of a p-GaN gate based enhancement mode HEMT is investigated in this work. A comparative analysis on the performance of back barrier based HEMT, with that of a conventional device is performed. The impact of mole fraction and doping of back barrier on device behaviour is analysed. The scope of back barrier design on device threshold voltage engineering is highlighted. The insertion of back barrier layer helps to increase carrier confinement and can be suitably adopted as a solution for short channel effects found in scaled devices.\",\"PeriodicalId\":184353,\"journal\":{\"name\":\"2022 International Conference on Innovative Trends in Information Technology (ICITIIT)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-02-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Conference on Innovative Trends in Information Technology (ICITIIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICITIIT54346.2022.9744205\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Innovative Trends in Information Technology (ICITIIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICITIIT54346.2022.9744205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance Evaluation of p-GaN Gate Enhancement Mode HEMT with Back Barriers
The effect of InGaN and p-GaN back barrier layers on the electrical characteristics of a p-GaN gate based enhancement mode HEMT is investigated in this work. A comparative analysis on the performance of back barrier based HEMT, with that of a conventional device is performed. The impact of mole fraction and doping of back barrier on device behaviour is analysed. The scope of back barrier design on device threshold voltage engineering is highlighted. The insertion of back barrier layer helps to increase carrier confinement and can be suitably adopted as a solution for short channel effects found in scaled devices.
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