中子辐照对FZ和MCZ硅探测器性能影响的系统研究

1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference Pub Date : 1993-10-31 DOI:10.1109/NSSMIC.1993.701662

M. Bosetti, C. Furetta, C. Leroy, S. Pensotti, P. Rancoita, M. Rattaggi, M. Redaelli, M. Rizzatti, A. Seidman, G. Terzi

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引用次数: 0

摘要

用快中子辐照浮区(FZ)和磁直拉尔斯基(MCZ)硅探测器，快中子辐照量大于1013n/cm2。研究了两种探测器的电荷收集效率对反向偏置电压(VB)和通量(a)的依赖关系。FZ和MCZ探测器对VB的依赖表明，载流子浓度与完全耗尽电压之间的关系不符合非对称阶跃结的标准方程。对于两种类型的探测器，发现Eff对0有对数依赖。

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Systematic Investigation Of The Neutron Irradiation Effects On The Performances Of FZ And MCZ Silicon Detectors

Float-Zone (FZ) and Magnetic-Czochralski (MCZ) silicon detectors were irradiated with fast neutron fluences larger than 1013n/cm2). The charge collection efficiency I ef f ) dependence on reverse bias voltage (VB) and on fluence (a) were investigated for both types of detectors. The (eff) dependence on VB, for FZ and MCZ detectors, shows that the relation between charge carrier concentration and full depletion voltage does not obey the standard equation for an unsymmetrical step junction. eff is found to have a logarithmic dependence on 0 for both types of detectors.

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1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference

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