{"title":"考虑温度相关泄漏模型的微架构级功率和热仿真","authors":"W. Liao, Fei Li, Lei He","doi":"10.1145/871506.871560","DOIUrl":null,"url":null,"abstract":"In this paper, we present power models with clock and temperature scaling, and develop a first-of-its-type coupled thermal and power simulation with a temperature-dependent leakage power model at the microarchitecture level. We show that leakage energy and total energy can be different by up to 2.5/spl times/ and 2/spl times/ for temperatures between 90/spl deg/C and 130/spl deg/C, respectively. Given such big energy variations, no power model at the microarchitecture level is accurate without considering temperature dependent leakage models.","PeriodicalId":355883,"journal":{"name":"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"58","resultStr":"{\"title\":\"Microarchitecture level power and thermal simulation considering temperature dependent leakage model\",\"authors\":\"W. Liao, Fei Li, Lei He\",\"doi\":\"10.1145/871506.871560\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present power models with clock and temperature scaling, and develop a first-of-its-type coupled thermal and power simulation with a temperature-dependent leakage power model at the microarchitecture level. We show that leakage energy and total energy can be different by up to 2.5/spl times/ and 2/spl times/ for temperatures between 90/spl deg/C and 130/spl deg/C, respectively. Given such big energy variations, no power model at the microarchitecture level is accurate without considering temperature dependent leakage models.\",\"PeriodicalId\":355883,\"journal\":{\"name\":\"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-08-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"58\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/871506.871560\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/871506.871560","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microarchitecture level power and thermal simulation considering temperature dependent leakage model
In this paper, we present power models with clock and temperature scaling, and develop a first-of-its-type coupled thermal and power simulation with a temperature-dependent leakage power model at the microarchitecture level. We show that leakage energy and total energy can be different by up to 2.5/spl times/ and 2/spl times/ for temperatures between 90/spl deg/C and 130/spl deg/C, respectively. Given such big energy variations, no power model at the microarchitecture level is accurate without considering temperature dependent leakage models.