空心阴极辉光放电在金属薄膜沉积过程中的应用

M. Bolotov
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引用次数: 0

摘要

金属薄膜广泛应用于现代工业的各个领域。然而,薄膜元件在不同的电子技术过程中得到了最广泛的应用,例如,在半导体器件的制造中,在激光和非线性光学中,为光学元件提供偏振、照明或反射特性等。目前沉积金属薄膜涂层的方法主要有两大类:化学气相沉积(CVD)和物理气相沉积(PVD),它们的不同之处在于获得原子、离子或分子的成膜通量。目前,物理气相沉积(PVD)方法受到了广泛的关注,这种方法通过涉及目标物蒸发的过程来获得合成涂层所需的原子和金属分子。这类方法的主要代表有真空电弧放电阴极点溅射、电子束和离子束溅射、热真空蒸发、磁控溅射等。这些技术的工业应用经验,使人们能够识别出它们的主要缺点,主要是沉积速率低,涂层均匀性差,与基材表面的附着力差,加工表面有限等。最近研究了一种在低于1 Pa的交叉电场和磁场条件下,用冷阴极异常辉光放电气体放电等离子体来产生原子和分子所需的通量,以获得金属薄膜层。进行的研究的结果
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APPLICATION OF HOLLOW CATHODE GLOW DISCHARGE IN THE PROCESSES OF THING METAL FILMS DEPOSITION
INTRODUCTION Thin metal films are widely used in various fields of modern industry. However, the most widespread use thin-film elements have got in the different electronics technological processes, for instance, in manufacturing of semiconductor devices, in laser and nonlinear optics to provide polarizing, illuminating or mirror properties to optical elements etc. Currently there are two main groups of methods for deposition of thin metal film coatings: chemical vapor deposition (CVD) and physical vapor deposition (PVD) which differentiate from each other with the process of obtaining a film-forming flux of atoms, ions or molecules. Nowadays, much attention is paid to physical vapor deposition (PVD) methods in which the atoms and metal molecules required for the synthesis of coatings are obtained by means of processes involving the evaporation of a target 1 . The main representatives of this group of methods are the sputtering by the cathode’s spots of vacuum arc discharge, electron and ion beams, thermal vacuum evaporation, magnetron sputtering and so on. The experience of industrial application of such technologies, made it possible to identify along with the advantages their main cons, mainly due to the low deposition rate, poor coating uniformity, poor adhesion to the substrate surface, limited processing surfaces, and the like. Recently, a gas-discharge plasma of abnormal glow discharge with a cold cathode in crossed electric and magnetic fields at pressures below 1 Pa for generating of necessary fluxes of atoms and molecules in order to obtain metal film layers is been used. The results of studies performed
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