低压布里奇曼生长CdZnTe探测器的性能

IEEE Nuclear Science Symposium Conference Record, 2005 Pub Date : 2005-10-23 DOI:10.1109/NSSMIC.2005.1596577

C. Seifert, J. Orrell, D. Coomes, B.L. LaMarche, M. Bliss, K. Lynn, K. Jones, G. Campi

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引用次数: 1

摘要

使用低压布里奇曼方法生长和掺杂CdZnTe的最新进展使得生产高电阻率晶体成为可能。在这项工作中，我们介绍了在华盛顿州立大学生长的CdZnTe样品的电特性测量。我们证明了CdZnTe材料作为辐射探测器的能力，并将探测器性能与晶体生长条件相关联。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance of CdZnTe detectors grown by low-pressure Bridgman

Recent advances in the growth and doping of CdZnTe using low-pressure Bridgman methods have allowed for the production of high-resistivity crystals. In this work, we present electrical characterization measurements on samples of CdZnTe grown at Washington State University. We demonstrate the capabilities of the CdZnTe material to perform as radiation detectors and correlate detector performance with crystal growth conditions.

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IEEE Nuclear Science Symposium Conference Record, 2005

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