{"title":"用于高频DC/DC变换器的MOSFET谐振同步整流器","authors":"W. Tabisz, F. Lee, D. Chen","doi":"10.1109/PESC.1990.131267","DOIUrl":null,"url":null,"abstract":"A resonant synchronous rectifier which combines the fast switching of Schottky diodes with low conduction drop of MOSFET devices is discussed. The MOSFET devices are driven in a resonant fashion by the power circuit, resulting in partial recovery of the energy stored in the parasitic capacitances. Power loss in the resonant synchronous rectifier is determined as a function of various devices parameters and switching frequency. Contributions of conduction losses, gate-drive switching losses, and losses due to current circulating in the parasitic capacitances are discussed. The analysis indicates that, at megahertz range switching frequencies, a resonant synchronous rectifier has a significantly higher efficiency than either a PWM (pulse width modulation) synchronous rectifier or a Schottky diode rectifier.<<ETX>>","PeriodicalId":330807,"journal":{"name":"21st Annual IEEE Conference on Power Electronics Specialists","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"106","resultStr":"{\"title\":\"A MOSFET resonant synchronous rectifier for high-frequency DC/DC converters\",\"authors\":\"W. Tabisz, F. Lee, D. Chen\",\"doi\":\"10.1109/PESC.1990.131267\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A resonant synchronous rectifier which combines the fast switching of Schottky diodes with low conduction drop of MOSFET devices is discussed. The MOSFET devices are driven in a resonant fashion by the power circuit, resulting in partial recovery of the energy stored in the parasitic capacitances. Power loss in the resonant synchronous rectifier is determined as a function of various devices parameters and switching frequency. Contributions of conduction losses, gate-drive switching losses, and losses due to current circulating in the parasitic capacitances are discussed. The analysis indicates that, at megahertz range switching frequencies, a resonant synchronous rectifier has a significantly higher efficiency than either a PWM (pulse width modulation) synchronous rectifier or a Schottky diode rectifier.<<ETX>>\",\"PeriodicalId\":330807,\"journal\":{\"name\":\"21st Annual IEEE Conference on Power Electronics Specialists\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"106\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"21st Annual IEEE Conference on Power Electronics Specialists\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1990.131267\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"21st Annual IEEE Conference on Power Electronics Specialists","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1990.131267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A MOSFET resonant synchronous rectifier for high-frequency DC/DC converters
A resonant synchronous rectifier which combines the fast switching of Schottky diodes with low conduction drop of MOSFET devices is discussed. The MOSFET devices are driven in a resonant fashion by the power circuit, resulting in partial recovery of the energy stored in the parasitic capacitances. Power loss in the resonant synchronous rectifier is determined as a function of various devices parameters and switching frequency. Contributions of conduction losses, gate-drive switching losses, and losses due to current circulating in the parasitic capacitances are discussed. The analysis indicates that, at megahertz range switching frequencies, a resonant synchronous rectifier has a significantly higher efficiency than either a PWM (pulse width modulation) synchronous rectifier or a Schottky diode rectifier.<>