曲线数据处理方法及验证

Clyde Browning, S. Postnikov, M. Milléquant, S. Bayle, P. Schiavone
{"title":"曲线数据处理方法及验证","authors":"Clyde Browning, S. Postnikov, M. Milléquant, S. Bayle, P. Schiavone","doi":"10.1117/12.2326599","DOIUrl":null,"url":null,"abstract":"Designs for photonic devices on silicon relies on non-Manhattan features such as curves and a wide variety of angles. Reticle Enhancement Techniques (RET) that are commonly used for CMOS manufacturing now are applied to curvilinear data patterns for the same reasons of enhancing pattern fidelity. Common techniques for curvilinear data processing include Manhattanization, jog removal, and jog alignment. We propose a novel method of describing curvilinear shapes in terms of curves reconstructed between control points. Such representation of curvilinear shapes brings many benefits in terms of pattern description (improved fidelity, file compaction), correction and verification. For example, it allows smooth displacements during the design correction procedure for process effects. The conventional correction by biasing each fragment illustrates the curve-based biasing where only the control points have been moved and the corrected shape was then reconstructed by connecting the control points in their new positions by the new curves. This method results in faster computation because there are fewer locations to adjust geometry, easier convergence and intrinsic continuity between edges. It also affords significant reduction of the design file size. Besides processing curvilinear pattern data, verification is also required after any original pattern modifications. Mask Rule Checks (MRC) are considered as standard step in any design data preparation flows, but the conventional MRC algorithms are conceived for Manhattan designs and as such they often result in numerous false errors or even missing errors when applied to photonics or ILT (Inverse Lithography Technology) designs. In addition, MRC for photonic layouts require much more than basic width and space checking. We developed a verification technology compliant with curvilinear layouts. The new MRC technique is also based on curve representation of the original design comparing directly the curves instead of the straight fragments. It permits to have only one error flag per curve instead of multiple errors seen in fragment-by-fragment MRC.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Curvilinear data processing methods and verification\",\"authors\":\"Clyde Browning, S. Postnikov, M. Milléquant, S. Bayle, P. Schiavone\",\"doi\":\"10.1117/12.2326599\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Designs for photonic devices on silicon relies on non-Manhattan features such as curves and a wide variety of angles. Reticle Enhancement Techniques (RET) that are commonly used for CMOS manufacturing now are applied to curvilinear data patterns for the same reasons of enhancing pattern fidelity. Common techniques for curvilinear data processing include Manhattanization, jog removal, and jog alignment. We propose a novel method of describing curvilinear shapes in terms of curves reconstructed between control points. Such representation of curvilinear shapes brings many benefits in terms of pattern description (improved fidelity, file compaction), correction and verification. For example, it allows smooth displacements during the design correction procedure for process effects. The conventional correction by biasing each fragment illustrates the curve-based biasing where only the control points have been moved and the corrected shape was then reconstructed by connecting the control points in their new positions by the new curves. This method results in faster computation because there are fewer locations to adjust geometry, easier convergence and intrinsic continuity between edges. It also affords significant reduction of the design file size. Besides processing curvilinear pattern data, verification is also required after any original pattern modifications. Mask Rule Checks (MRC) are considered as standard step in any design data preparation flows, but the conventional MRC algorithms are conceived for Manhattan designs and as such they often result in numerous false errors or even missing errors when applied to photonics or ILT (Inverse Lithography Technology) designs. In addition, MRC for photonic layouts require much more than basic width and space checking. We developed a verification technology compliant with curvilinear layouts. The new MRC technique is also based on curve representation of the original design comparing directly the curves instead of the straight fragments. It permits to have only one error flag per curve instead of multiple errors seen in fragment-by-fragment MRC.\",\"PeriodicalId\":287066,\"journal\":{\"name\":\"European Mask and Lithography Conference\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"European Mask and Lithography Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2326599\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Mask and Lithography Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2326599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

硅上的光子器件的设计依赖于非曼哈顿特征,如曲线和各种角度。由于提高图形保真度的原因,目前普遍用于CMOS制造的光栅增强技术(RET)也被应用于曲线数据模式。曲线数据处理的常用技术包括曼哈顿化、慢跑去除和慢跑对齐。我们提出了一种用控制点之间重建的曲线来描述曲线形状的新方法。曲线形状的这种表示在模式描述(提高保真度、文件压缩)、校正和验证方面带来了许多好处。例如,它允许在工艺效果的设计校正过程中的平滑位移。通过对每个片段进行偏置的传统校正说明了基于曲线的偏置,其中只有控制点被移动,然后通过新曲线连接新位置的控制点来重建校正后的形状。该方法计算速度快,因为需要调整几何形状的位置少,更容易收敛,并且边缘之间具有内在的连续性。它还大大减少了设计文件的大小。除了处理曲线图案数据外,还需要对原始图案进行修改后的验证。掩模规则检查(MRC)被认为是任何设计数据准备流程中的标准步骤,但传统的MRC算法是为曼哈顿设计而设计的,因此,当应用于光子学或ILT(逆光刻技术)设计时,它们通常会导致许多虚假错误甚至遗漏错误。此外,光子布局的MRC需要的不仅仅是基本的宽度和空间检查。我们开发了一种符合曲线布局的验证技术。新的MRC技术也是基于原始设计的曲线表示,直接比较曲线而不是直线碎片。它允许每条曲线只有一个错误标志,而不是在片段-片段MRC中看到的多个错误。
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Curvilinear data processing methods and verification
Designs for photonic devices on silicon relies on non-Manhattan features such as curves and a wide variety of angles. Reticle Enhancement Techniques (RET) that are commonly used for CMOS manufacturing now are applied to curvilinear data patterns for the same reasons of enhancing pattern fidelity. Common techniques for curvilinear data processing include Manhattanization, jog removal, and jog alignment. We propose a novel method of describing curvilinear shapes in terms of curves reconstructed between control points. Such representation of curvilinear shapes brings many benefits in terms of pattern description (improved fidelity, file compaction), correction and verification. For example, it allows smooth displacements during the design correction procedure for process effects. The conventional correction by biasing each fragment illustrates the curve-based biasing where only the control points have been moved and the corrected shape was then reconstructed by connecting the control points in their new positions by the new curves. This method results in faster computation because there are fewer locations to adjust geometry, easier convergence and intrinsic continuity between edges. It also affords significant reduction of the design file size. Besides processing curvilinear pattern data, verification is also required after any original pattern modifications. Mask Rule Checks (MRC) are considered as standard step in any design data preparation flows, but the conventional MRC algorithms are conceived for Manhattan designs and as such they often result in numerous false errors or even missing errors when applied to photonics or ILT (Inverse Lithography Technology) designs. In addition, MRC for photonic layouts require much more than basic width and space checking. We developed a verification technology compliant with curvilinear layouts. The new MRC technique is also based on curve representation of the original design comparing directly the curves instead of the straight fragments. It permits to have only one error flag per curve instead of multiple errors seen in fragment-by-fragment MRC.
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