S. S. Shariffudin, N. Ibrahim, M. Sarah, H. Hashim
{"title":"退火温度对ZnO/CuO纳米复合薄膜特性的影响","authors":"S. S. Shariffudin, N. Ibrahim, M. Sarah, H. Hashim","doi":"10.1109/SMELEC.2016.7573620","DOIUrl":null,"url":null,"abstract":"Nanoparticles ZnO/CuO composite was successfully prepared through a simple sol-gel spin coating technique. The annealing temperature was within the range of 400°C to 600°C to study its effect to the physical, optical and electrical properties to the thin films. Their characteristics were studied by field emission scanning electron microscopy (FESEM), Atomic Force Microscopy (AFM), UV-Vis spectroscopy and 2-point probes I-V measurement. The thickness and grain size increased with the annealing temperature. The direct optical bandgap observed were between 3.06 eV to 3.2 eV, which increased with the decreased of the annealing temperature. The highest conductivity was obtained for sample annealed at 400°C with a value of 0.61614 S/cm.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Effect of annealing temperature on characteristics of ZnO/CuO nanocomposite thin films\",\"authors\":\"S. S. Shariffudin, N. Ibrahim, M. Sarah, H. Hashim\",\"doi\":\"10.1109/SMELEC.2016.7573620\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nanoparticles ZnO/CuO composite was successfully prepared through a simple sol-gel spin coating technique. The annealing temperature was within the range of 400°C to 600°C to study its effect to the physical, optical and electrical properties to the thin films. Their characteristics were studied by field emission scanning electron microscopy (FESEM), Atomic Force Microscopy (AFM), UV-Vis spectroscopy and 2-point probes I-V measurement. The thickness and grain size increased with the annealing temperature. The direct optical bandgap observed were between 3.06 eV to 3.2 eV, which increased with the decreased of the annealing temperature. The highest conductivity was obtained for sample annealed at 400°C with a value of 0.61614 S/cm.\",\"PeriodicalId\":169983,\"journal\":{\"name\":\"2016 IEEE International Conference on Semiconductor Electronics (ICSE)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Conference on Semiconductor Electronics (ICSE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2016.7573620\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2016.7573620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of annealing temperature on characteristics of ZnO/CuO nanocomposite thin films
Nanoparticles ZnO/CuO composite was successfully prepared through a simple sol-gel spin coating technique. The annealing temperature was within the range of 400°C to 600°C to study its effect to the physical, optical and electrical properties to the thin films. Their characteristics were studied by field emission scanning electron microscopy (FESEM), Atomic Force Microscopy (AFM), UV-Vis spectroscopy and 2-point probes I-V measurement. The thickness and grain size increased with the annealing temperature. The direct optical bandgap observed were between 3.06 eV to 3.2 eV, which increased with the decreased of the annealing temperature. The highest conductivity was obtained for sample annealed at 400°C with a value of 0.61614 S/cm.
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