{"title":"用于5G应用的ka波段MMIC低噪声放大器的设计","authors":"Ngoc Nguyen Xuan, Hoang Nguyen Huy, Manh Luong Duy","doi":"10.1109/NICS54270.2021.9701480","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a design diagram of a low noise amplifier using NP2500MS transistor 0.25 pm AlGaN/ GaN HEMT technology of WIN Semiconductor, Taiwan, consisting of 2 stages at center frequency 25.8 GHz, this is the frequency band used for the 5th Generation Mobile Communications and some other K/Ka-band applications. With this transistor, the LNA has achieved a noise Figure less than 1.65 dB and the average Gain is 13 dB in the whole bandwidth.","PeriodicalId":296963,"journal":{"name":"2021 8th NAFOSTED Conference on Information and Computer Science (NICS)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design of a Ka-band MMIC Low Noise Amplifier for 5G applications\",\"authors\":\"Ngoc Nguyen Xuan, Hoang Nguyen Huy, Manh Luong Duy\",\"doi\":\"10.1109/NICS54270.2021.9701480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose a design diagram of a low noise amplifier using NP2500MS transistor 0.25 pm AlGaN/ GaN HEMT technology of WIN Semiconductor, Taiwan, consisting of 2 stages at center frequency 25.8 GHz, this is the frequency band used for the 5th Generation Mobile Communications and some other K/Ka-band applications. With this transistor, the LNA has achieved a noise Figure less than 1.65 dB and the average Gain is 13 dB in the whole bandwidth.\",\"PeriodicalId\":296963,\"journal\":{\"name\":\"2021 8th NAFOSTED Conference on Information and Computer Science (NICS)\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 8th NAFOSTED Conference on Information and Computer Science (NICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NICS54270.2021.9701480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 8th NAFOSTED Conference on Information and Computer Science (NICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NICS54270.2021.9701480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本文提出了一种采用台湾WIN半导体公司的NP2500MS晶体管0.25 pm AlGaN/ GaN HEMT技术的低噪声放大器的设计方案，该放大器的中心频率为25.8 GHz，这是第五代移动通信和其他一些K/ ka波段应用所使用的频段。使用该晶体管，LNA在整个带宽内的噪声系数小于1.65 dB，平均增益为13 dB。
Design of a Ka-band MMIC Low Noise Amplifier for 5G applications
In this paper, we propose a design diagram of a low noise amplifier using NP2500MS transistor 0.25 pm AlGaN/ GaN HEMT technology of WIN Semiconductor, Taiwan, consisting of 2 stages at center frequency 25.8 GHz, this is the frequency band used for the 5th Generation Mobile Communications and some other K/Ka-band applications. With this transistor, the LNA has achieved a noise Figure less than 1.65 dB and the average Gain is 13 dB in the whole bandwidth.
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