{"title":"用于同步整流SMPS的集成MOSFET接口","authors":"A. Hastings","doi":"10.1109/BIPOL.1995.493866","DOIUrl":null,"url":null,"abstract":"The availability of high-performance bipolar and MOSFET transistors upon the same substrate offers substantial advantages to the linear designer. NPN pulse power transistors combined with MOSFET predrive circuitry yield a high-performance gate driver that requires no DC bias current. Similarly, the availability of NPN transistors allows the use of translinear circuitry for analog computation. A SMPS control IC, incorporating gate drive and current limit circuitry that makes use of these advantages for a BiCMOS synchronously rectified buck switch-mode power supply, is described.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Integrated MOSFET interface for a synchronously-rectified SMPS\",\"authors\":\"A. Hastings\",\"doi\":\"10.1109/BIPOL.1995.493866\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The availability of high-performance bipolar and MOSFET transistors upon the same substrate offers substantial advantages to the linear designer. NPN pulse power transistors combined with MOSFET predrive circuitry yield a high-performance gate driver that requires no DC bias current. Similarly, the availability of NPN transistors allows the use of translinear circuitry for analog computation. A SMPS control IC, incorporating gate drive and current limit circuitry that makes use of these advantages for a BiCMOS synchronously rectified buck switch-mode power supply, is described.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493866\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493866","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integrated MOSFET interface for a synchronously-rectified SMPS
The availability of high-performance bipolar and MOSFET transistors upon the same substrate offers substantial advantages to the linear designer. NPN pulse power transistors combined with MOSFET predrive circuitry yield a high-performance gate driver that requires no DC bias current. Similarly, the availability of NPN transistors allows the use of translinear circuitry for analog computation. A SMPS control IC, incorporating gate drive and current limit circuitry that makes use of these advantages for a BiCMOS synchronously rectified buck switch-mode power supply, is described.