{"title":"新型siret的开关损耗——与其他中等功率器件的比较","authors":"H. Schmid","doi":"10.1109/IAS.1988.25122","DOIUrl":null,"url":null,"abstract":"The SIRET is an n-p-n power transistor with a large safe operating area for applications up to 20 kHz and more. Measurements of the power dissipation are presented and compared to measurements on other power devices. The results were obtained by thermal measurements and compared to the results of the calculation of the product of voltage and current as a function of time. The calculation requires the correction for the time delay introduced by the current probe and preamplifier as well as signal distortions introduced by unavoidable parasitic elements. The results of switchable current vs. frequency were found at constant power dissipation on four different devices: a SIRET, two IGBTs (insulated-gate bipolar transistors), and a power MOSFET. The most suitable application areas of these devices are discussed.<<ETX>>","PeriodicalId":274766,"journal":{"name":"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Switching losses of the new SIRET-a comparison to other medium-power devices\",\"authors\":\"H. Schmid\",\"doi\":\"10.1109/IAS.1988.25122\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The SIRET is an n-p-n power transistor with a large safe operating area for applications up to 20 kHz and more. Measurements of the power dissipation are presented and compared to measurements on other power devices. The results were obtained by thermal measurements and compared to the results of the calculation of the product of voltage and current as a function of time. The calculation requires the correction for the time delay introduced by the current probe and preamplifier as well as signal distortions introduced by unavoidable parasitic elements. The results of switchable current vs. frequency were found at constant power dissipation on four different devices: a SIRET, two IGBTs (insulated-gate bipolar transistors), and a power MOSFET. The most suitable application areas of these devices are discussed.<<ETX>>\",\"PeriodicalId\":274766,\"journal\":{\"name\":\"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.1988.25122\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1988.25122","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Switching losses of the new SIRET-a comparison to other medium-power devices
The SIRET is an n-p-n power transistor with a large safe operating area for applications up to 20 kHz and more. Measurements of the power dissipation are presented and compared to measurements on other power devices. The results were obtained by thermal measurements and compared to the results of the calculation of the product of voltage and current as a function of time. The calculation requires the correction for the time delay introduced by the current probe and preamplifier as well as signal distortions introduced by unavoidable parasitic elements. The results of switchable current vs. frequency were found at constant power dissipation on four different devices: a SIRET, two IGBTs (insulated-gate bipolar transistors), and a power MOSFET. The most suitable application areas of these devices are discussed.<>
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