Floquet拓扑绝缘子的多尺度不变量

G. Bal, Daniel Massatt
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引用次数: 8

摘要

本文分析了电磁波在二维材料(如石墨烯)上时谐辐射产生的Floquet拓扑绝缘子。我们分析了光-物质相互作用演化的近似体和边缘拓扑。拓扑保护的界面状态是通过驱动偏振在界面上的空间调制产生的。在高频调制体制下,我们得到了一系列适用于不同时间尺度的拓扑结构。详细计算了体积差不变量,并证明了体积接口对应关系的适用。我们还分析了导致大间隙有效拓扑拓扑的高频高幅度调制,该拓扑仅在中等时间内有效。
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Multiscale Invariants of Floquet Topological Insulators
This paper analyzes Floquet topological insulators resulting from the time-harmonic irradiation of electromagnetic waves on two dimensional materials such as graphene. We analyze the bulk and edge topologies of approximations to the evolution of the light-matter interaction. Topologically protected interface states are created by spatial modulations of the drive polarization across an interface. In the high-frequency modulation regime, we obtain a sequence of topologies that apply to different time scales. Bulk-difference invariants are computed in detail and a bulk-interface correspondence is shown to apply. We also analyze a high-frequency high-amplitude modulation resulting in a large-gap effective topology topologically that remains valid only for moderately long times.
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