介绍了忆阻器结构的实验室设备和测试方法

2015 International Conference "Stability and Control Processes" in Memory of V.I. Zubov (SCP) Pub Date : 2015-12-03 DOI:10.1109/SCP.2015.7342088

N. Permiakov, Alexander Ivanov, Vyacheslav Moshnikov

{"title":"介绍了忆阻器结构的实验室设备和测试方法","authors":"N. Permiakov, Alexander Ivanov, Vyacheslav Moshnikov","doi":"10.1109/SCP.2015.7342088","DOIUrl":null,"url":null,"abstract":"Recent advances in information technology require higher-speed and higher-density memory devices. Testing and development of the technology of these devices is a complex task. The paper presents the option of using an electron microscope and setup for measuring electrical parameters.","PeriodicalId":110366,"journal":{"name":"2015 International Conference \"Stability and Control Processes\" in Memory of V.I. Zubov (SCP)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The laboratory facility and testing methods memristor structures\",\"authors\":\"N. Permiakov, Alexander Ivanov, Vyacheslav Moshnikov\",\"doi\":\"10.1109/SCP.2015.7342088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent advances in information technology require higher-speed and higher-density memory devices. Testing and development of the technology of these devices is a complex task. The paper presents the option of using an electron microscope and setup for measuring electrical parameters.\",\"PeriodicalId\":110366,\"journal\":{\"name\":\"2015 International Conference \\\"Stability and Control Processes\\\" in Memory of V.I. Zubov (SCP)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Conference \\\"Stability and Control Processes\\\" in Memory of V.I. Zubov (SCP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SCP.2015.7342088\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference \"Stability and Control Processes\" in Memory of V.I. Zubov (SCP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCP.2015.7342088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

信息技术的最新进展要求更高速度和更高密度的存储设备。测试和开发这些设备的技术是一项复杂的任务。本文介绍了使用电子显微镜和装置测量电参数的选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The laboratory facility and testing methods memristor structures

Recent advances in information technology require higher-speed and higher-density memory devices. Testing and development of the technology of these devices is a complex task. The paper presents the option of using an electron microscope and setup for measuring electrical parameters.

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2015 International Conference "Stability and Control Processes" in Memory of V.I. Zubov (SCP)

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