基于变化感知ted的纳米cmos RTL泄漏优化方法

Shibaji Banerjee, J. Mathew, D. Pradhan, S. Mohanty, M. Ciesielski
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引用次数: 2

摘要

随着纳米技术的发展,工艺的变化对电路的特性有着深远的影响。在纳米cmos电路设计中,满足这种工艺变化下的时序和功率限制越来越困难。这导致从基于最坏情况的分析和优化转变为基于统计或概率的分析和优化,在每个层次的电路抽象。本文提出了一种基于泰勒展开图(TED)的多?高水平合成(HLS)中的Tox技术。提出了一种能感知变化的同步调度和资源绑定算法,该算法能在时间产出和性能约束下实现功率产出最大化。为了这个目的,一个多?Tox库在过程变化下进行表征。对不同功能单元的时延和功率分布进行了详尽的研究。提出的变化感知算法利用这些组件在给定的时序良率和性能约束下产生低功耗RTL。实验结果表明,在给定的约束条件下,泄漏功率的提高可达95%。
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Variation-Aware TED-Based Approach for Nano-CMOS RTL Leakage Optimization
As technology scales down to nanometer regime the process variations have profound effect on circuit characteristics. Meeting timing and power constraints under such process variations in nano-CMOS circuit design is increasingly difficult. This causes a shifting from worst-case based analysis and optimization to statistical or probability based analysis and optimization at every level of circuit abstraction. This paper presents a TED (Taylor Expansion Diagram) based multi ? Tox techniques during high-level synthesis (HLS). A variation-aware simultaneous scheduling and resource binding algorithm is proposed which maximizes the power yield under timing yield and performance constraint. For this purpose, a multi ? Tox library is characterized under process variation. The delay and power distribution of different functional units are exhaustively studied. The proposed variation-aware algorithm uses those components for generating low power RTL under a given timing yield and performance constraint. The experimental results show significant improvement as high as 95% on leakage power yield under given constraints.
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