化合物半导体hemt的非线性建模研究进展

W. Curtice
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引用次数: 12

摘要

本文将回顾微波功率应用中化合物半导体hfet和hemt的建模研究进展。一些简单的物理说明了为什么SPICE模型,或紧凑模型,不能包含设备操作的所有方面。由于模型是不完整的,任何给定的模型都可能被改进,因此,可修改的用户定义的紧凑模型是首选。特别是,Verilog-A编码模型显示出许多令人满意的特性。描述了精确系统和电路仿真的最低建模要求,以及目前的建模技术。
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Nonlinear modeling of compound semiconductor HEMTs state of the art
This paper will review the state-of-the-art for modeling compound semiconductor HFETs and HEMTs for microwave power applications. Some simple physics shows why SPICE models, or compact models, cannot contain all aspects of the device operation. Because the models are incomplete, any given model may always be improved and thus, modifiable user-defined compact models are preferred. In particular, Verilog-A coded models are shown to have many desirable features. Minimum modeling requirements for accurate system and circuit simulation are described, as well as present modeling techniques.
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