{"title":"具有紧凑型谐波陷阱的GaN多尔蒂放大器","authors":"P. Colantonio, F. Giannini, R. Giofré, L. Piazzon","doi":"10.1109/EUMC.2008.4751765","DOIUrl":null,"url":null,"abstract":"In this contribution, the design of an uneven AB-C Doherty power amplifier (DPA) in GaN technology, implementing a new approach to control the higher device harmonics, is presented. The DPA was designed to operate at 2.14 GHz and with the aim to reduce as much as possible the chip size, without losing the Doherty operating principle. The measurement results in CW conditions at 2.14 GHz had shown average drain efficiency higher than 55% at 6 dB of back-off, with a saturated output power of 37 dBm.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"GaN Doherty Amplifier With Compact Harmonic Traps\",\"authors\":\"P. Colantonio, F. Giannini, R. Giofré, L. Piazzon\",\"doi\":\"10.1109/EUMC.2008.4751765\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this contribution, the design of an uneven AB-C Doherty power amplifier (DPA) in GaN technology, implementing a new approach to control the higher device harmonics, is presented. The DPA was designed to operate at 2.14 GHz and with the aim to reduce as much as possible the chip size, without losing the Doherty operating principle. The measurement results in CW conditions at 2.14 GHz had shown average drain efficiency higher than 55% at 6 dB of back-off, with a saturated output power of 37 dBm.\",\"PeriodicalId\":344657,\"journal\":{\"name\":\"2008 European Microwave Integrated Circuit Conference\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMC.2008.4751765\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMC.2008.4751765","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this contribution, the design of an uneven AB-C Doherty power amplifier (DPA) in GaN technology, implementing a new approach to control the higher device harmonics, is presented. The DPA was designed to operate at 2.14 GHz and with the aim to reduce as much as possible the chip size, without losing the Doherty operating principle. The measurement results in CW conditions at 2.14 GHz had shown average drain efficiency higher than 55% at 6 dB of back-off, with a saturated output power of 37 dBm.
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