{"title":"基于工程增益-带宽积标度定律的紧凑等离子体增强MoTe2光电探测器","authors":"Hao Wang, V. Sorger","doi":"10.23919/MOC52031.2021.9598065","DOIUrl":null,"url":null,"abstract":"Owing to the transition metal dichalcogenides strong light-matter interaction and distinctive materials properties. But low carrier mobilities limited the performance of the device. Here we demonstrate an efficient plasmonic slot photodetector based on integrating MoTe2 in silicon photonics. Narrowing the source-drain distance to tens of nm enables high gain-bandwidth-product detectors.","PeriodicalId":355935,"journal":{"name":"2021 26th Microoptics Conference (MOC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Compact Plasmonic Enhanced MoTe2 Photodetector based on Engineering Gain-Bandwidth-Product Scaling Laws\",\"authors\":\"Hao Wang, V. Sorger\",\"doi\":\"10.23919/MOC52031.2021.9598065\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Owing to the transition metal dichalcogenides strong light-matter interaction and distinctive materials properties. But low carrier mobilities limited the performance of the device. Here we demonstrate an efficient plasmonic slot photodetector based on integrating MoTe2 in silicon photonics. Narrowing the source-drain distance to tens of nm enables high gain-bandwidth-product detectors.\",\"PeriodicalId\":355935,\"journal\":{\"name\":\"2021 26th Microoptics Conference (MOC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 26th Microoptics Conference (MOC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MOC52031.2021.9598065\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 26th Microoptics Conference (MOC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MOC52031.2021.9598065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Compact Plasmonic Enhanced MoTe2 Photodetector based on Engineering Gain-Bandwidth-Product Scaling Laws
Owing to the transition metal dichalcogenides strong light-matter interaction and distinctive materials properties. But low carrier mobilities limited the performance of the device. Here we demonstrate an efficient plasmonic slot photodetector based on integrating MoTe2 in silicon photonics. Narrowing the source-drain distance to tens of nm enables high gain-bandwidth-product detectors.