Bi-Sb半导体合金热功率最大值的机理

M. Itoh, H. Kitagawa, T. Kodama, H. Noguchi, S. Sota, K. Hasezaki, Y. Noda
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引用次数: 1

摘要

利用多载流子玻尔兹曼输运理论研究了高效热电材料铋锑合金塞贝克系数的温度依赖性。通过求解一个积分方程,计算出化学势与测量的霍尔系数自一致。计算出的化学势清楚地表明了从外在到内在的转变,并决定了所有输运性质对温度的依赖。特别地,最大热功率必然出现在转变温度附近。证实了L点导带中的电子是主导载流子,而L点、T点和H点的价带主要是载流子储层。电子是足够简并的,传统的分析是误导性的,对应于方程的非物理解。
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Mechanism of thermopower maximum of Bi-Sb semiconducting alloys
Temperature dependence of the Seebeck coefficient of Bi-Sb alloy, which is known to be an efficient thermoelectric material, is investigated in terms of the multi-carrier Boltzmann transport theory. The chemical potential is calculated self-consistently with the measured Hall coefficient, by solving an integral equation. The calculated chemical potential shows a clear indication of the extrinsic-to-intrinsic transition, and determines the temperature dependence of all the transport properties. In particular, maximum thermopower is bound to occur in the vicinity of the transition temperature. It is confirmed that the electrons in the L-point conduction band act as dominant carriers, whereas the valence bands at the L, T and H points serve primarily as carrier reservoirs. The electrons are sufficiently degenerate that the conventional analysis is misleading, corresponding to the unphysical solution of the equation.
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