工程低暗电流密度锗硅光电二极管

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9673841

E. Postelnicu, S. Marzen, Rui‐Tao Wen, D. Ma, Baoming Wang, K. Wada, J. Michel, L. Kimerling

{"title":"工程低暗电流密度锗硅光电二极管","authors":"E. Postelnicu, S. Marzen, Rui‐Tao Wen, D. Ma, Baoming Wang, K. Wada, J. Michel, L. Kimerling","doi":"10.1109/GFP51802.2021.9673841","DOIUrl":null,"url":null,"abstract":"We have studied the roles of 425-800C post-growth annealing and ALD surface passivation on the dark current of Geon-Si p-i-n photodiodes. Sidewall passivation via Al<inf>2</inf>O<inf>3</inf> deposition at 250C removes all peripheral leakage components. These processes yield a mean value of J<inf>d</inf> = 160nA/cm<sup>2</sup> at -1V.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Engineering Low Dark Current Density for Ge-on-Si Photodiodes\",\"authors\":\"E. Postelnicu, S. Marzen, Rui‐Tao Wen, D. Ma, Baoming Wang, K. Wada, J. Michel, L. Kimerling\",\"doi\":\"10.1109/GFP51802.2021.9673841\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied the roles of 425-800C post-growth annealing and ALD surface passivation on the dark current of Geon-Si p-i-n photodiodes. Sidewall passivation via Al<inf>2</inf>O<inf>3</inf> deposition at 250C removes all peripheral leakage components. These processes yield a mean value of J<inf>d</inf> = 160nA/cm<sup>2</sup> at -1V.\",\"PeriodicalId\":158770,\"journal\":{\"name\":\"2021 IEEE 17th International Conference on Group IV Photonics (GFP)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 17th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GFP51802.2021.9673841\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GFP51802.2021.9673841","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们研究了425-800C生长后退火和ALD表面钝化对gan - si p-i-n光电二极管暗电流的影响。在250℃下通过Al2O3沉积的侧壁钝化去除所有外围泄漏成分。这些过程在-1V时产生Jd = 160nA/cm2的平均值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Engineering Low Dark Current Density for Ge-on-Si Photodiodes

We have studied the roles of 425-800C post-growth annealing and ALD surface passivation on the dark current of Geon-Si p-i-n photodiodes. Sidewall passivation via Al2O3 deposition at 250C removes all peripheral leakage components. These processes yield a mean value of Jd = 160nA/cm² at -1V.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 IEEE 17th International Conference on Group IV Photonics (GFP)

自引率

0.00%

发文量