用于$10\mu\ mathm {m}$ Pitch $640\times 512$红外焦平面阵列的低功耗高线性低温读出集成电路

Zhiqiang Lu, Yuze Niu, Zhongjian Chen, Bowei An, Yacong Zhang, Wengao Lu
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引用次数: 0

摘要

本文提出了一种低功耗低温读出集成电路(ROIC),具有640\ × 512$红外焦平面阵列(IRFPA)的大电荷处理能力。为了降低读出集成电路的功耗,保证输出电压的高线性度,提出了在输出缓冲电路中采用两级级源跟随器的创新结构。此外,通过异形布局结构,尽可能保持像素阵列中集成电容的面积,保证较大的电荷处理能力。当集成模式为边读边集成(IWR)时,读出集成电路的帧率为100Hz,电荷处理能力为7.28Me−,非线性为0.87‰,功耗为61mW,输出速率为$4\ × 10\text{MHz}$。
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A Low Power High Linearity Cryogenic Readout Integrated Circuit with Large Charge Handling Capacity for $10\mu\mathrm{m}$ Pitch $640\times 512$ Infrared Focal Plane Array
This paper presents a low power cryogenic readout integrated circuit(ROIC) with large charge handling capacity for $640\times 512$ infrared focal plane array(IRFPA). An innovative structure using two-stage cascaded source followers in output buffer circuit is proposed to reduce the power consumption of the readout integrated circuit and ensure high linearity of the output voltage. Besides, the area of the integration capacitor in pixel array is maintained as large as possible to ensure large charge handling capacity through a special-shape layout structure. The readout integrated circuit implements frame rate of 100Hz, charge handling capacity of 7.28Me−, nonlinearity of 0.87‰ and power consumption of 61mW with $4\times 10\text{MHz}$ output rate when the integration mode is integration while reading(IWR).
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