宽带双栅场效应晶体管连续可变移相器

1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI:10.1109/MWSYM.1981.1129950

M. Kumar, R. Menna, Ho-Chung Huang

{"title":"宽带双栅场效应晶体管连续可变移相器","authors":"M. Kumar, R. Menna, Ho-Chung Huang","doi":"10.1109/MWSYM.1981.1129950","DOIUrl":null,"url":null,"abstract":"This paper describes a broadband, GaAs dual-gate FET phase shifter capable of continuous phase shift from 0/spl deg/ -360/spl deg/ over the 4-8 GHz band. Although the present unit is, in discreet term, it is designed to be compatible with monolithic fabrication technology.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Broadband Dual-Gate FET Continuously Variable Phase Shifter\",\"authors\":\"M. Kumar, R. Menna, Ho-Chung Huang\",\"doi\":\"10.1109/MWSYM.1981.1129950\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a broadband, GaAs dual-gate FET phase shifter capable of continuous phase shift from 0/spl deg/ -360/spl deg/ over the 4-8 GHz band. Although the present unit is, in discreet term, it is designed to be compatible with monolithic fabrication technology.\",\"PeriodicalId\":120372,\"journal\":{\"name\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1981.1129950\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

本文描述了一种宽带GaAs双栅场效应管移相器，能够在4-8 GHz频段内从0/spl度/ -360/spl度连续移相。虽然目前的单元是谨慎的，但它被设计成与单片制造技术兼容。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Broadband Dual-Gate FET Continuously Variable Phase Shifter

This paper describes a broadband, GaAs dual-gate FET phase shifter capable of continuous phase shift from 0/spl deg/ -360/spl deg/ over the 4-8 GHz band. Although the present unit is, in discreet term, it is designed to be compatible with monolithic fabrication technology.

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1981 IEEE MTT-S International Microwave Symposium Digest

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