复合材料的深度还原

Shiteng Chen, Periklis A. Papakonstantinou
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引用次数: 10

摘要

我们得到了一个新的深度缩减结构,这意味着将NEXP与非均匀ACC分离的深度下界有了超指数的改进。特别是,我们证明了每个具有与、或、非和MODm门的电路,m ε Z+,多项式大小和深度为d,可以简化为一个深度为2的SYM-AND电路,大小为2(log n)O(d)。与传统的Yao-Beigel-Tarui相比,这是一个指数级的改进,传统的Yao-Beigel-Tarui的大小是2(log n)2O(d)。因此,复合m的深度缩减与1989年以来质数的Allender-Hertrampf构造的大小相匹配。在Williams针对NEXP的ACC电路下界程序中,深度减小的一个直接含义是深度从0 (loglog n)提高到o(log n/loglog n)。这只差0 (log n/loglog n),因此将William的程序推向了NC1障碍,因为NC1包含在深度为O(log n/loglog n)的ACC中。第二个含义(但不是直接的)是关于在Chattopadhyay-Santhanam交互压缩设置中ACC下界的加强。
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Depth-Reduction for Composites
We obtain a new depth-reduction construction, which implies a super-exponential improvement in the depth lower bound separating NEXP from non-uniform ACC. In particular, we show that every circuit with AND, OR, NOT, and MODm gates, m ε Z+, of polynomial size and depth d can be reduced to a depth-2, SYM-AND, circuit of size 2(log n)O(d). This is an exponential size improvement over the traditional Yao-Beigel-Tarui, which has size blowup 2(log n)2O(d). Therefore, depth-reduction for composite m matches the size of the Allender-Hertrampf construction for primes from 1989. One immediate implication of depth reduction is an improvement of the depth from o(loglog n) to o(log n/loglog n), in Williams' program for ACC circuit lower bounds against NEXP. This is just short of O(log n/loglog n) and thus pushes William's program to the NC1 barrier, since NC1 is contained in ACC of depth O(log n/loglog n). A second, but non-immediate, implication regards the strengthening of the ACC lower bound in the Chattopadhyay-Santhanam interactive compression setting.
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