{"title":"压力对过补偿半导体肖特基二极管性能的影响","authors":"S. Daliev, F. A. Saparov","doi":"10.37681/2181-1652-019-x-2021-2-4","DOIUrl":null,"url":null,"abstract":"The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the thermo treatment of the starting silicon wafer","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR\",\"authors\":\"S. Daliev, F. A. Saparov\",\"doi\":\"10.37681/2181-1652-019-x-2021-2-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the thermo treatment of the starting silicon wafer\",\"PeriodicalId\":153395,\"journal\":{\"name\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-04-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.37681/2181-1652-019-x-2021-2-4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37681/2181-1652-019-x-2021-2-4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR
The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the thermo treatment of the starting silicon wafer
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