通过注入锁定超高Q氮化硅微谐振器的赫兹级线宽半导体激光器

2021 Conference on Lasers and Electro-Optics (CLEO) Pub Date : 2021-05-01 DOI:10.1364/cleo_si.2021.sm1a.2

W. Jin, Qifan Yang, L. Chang, B. Shen, Heming Wang, M. A. Leal, Lue Wu, Maodong Gao, Avi Feshali, M. Paniccia, K. Vahala, J. Bowers

{"title":"通过注入锁定超高Q氮化硅微谐振器的赫兹级线宽半导体激光器","authors":"W. Jin, Qifan Yang, L. Chang, B. Shen, Heming Wang, M. A. Leal, Lue Wu, Maodong Gao, Avi Feshali, M. Paniccia, K. Vahala, J. Bowers","doi":"10.1364/cleo_si.2021.sm1a.2","DOIUrl":null,"url":null,"abstract":"A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundryfabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz2 Hz-1 and yielding instantaneous linewidth of 1.2 Hz.","PeriodicalId":384075,"journal":{"name":"2021 Conference on Lasers and Electro-Optics (CLEO)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator\",\"authors\":\"W. Jin, Qifan Yang, L. Chang, B. Shen, Heming Wang, M. A. Leal, Lue Wu, Maodong Gao, Avi Feshali, M. Paniccia, K. Vahala, J. Bowers\",\"doi\":\"10.1364/cleo_si.2021.sm1a.2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundryfabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz2 Hz-1 and yielding instantaneous linewidth of 1.2 Hz.\",\"PeriodicalId\":384075,\"journal\":{\"name\":\"2021 Conference on Lasers and Electro-Optics (CLEO)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 Conference on Lasers and Electro-Optics (CLEO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/cleo_si.2021.sm1a.2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Conference on Lasers and Electro-Optics (CLEO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/cleo_si.2021.sm1a.2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

传统半导体DFB激光器自注入锁定在cmos代工制造的超高Q氮化硅微谐振器上，将高偏置频率噪声抑制到0.2 Hz2 Hz-1，产生1.2 Hz的瞬时线宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator

A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundryfabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz2 Hz-1 and yielding instantaneous linewidth of 1.2 Hz.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 Conference on Lasers and Electro-Optics (CLEO)

自引率

0.00%

发文量