te掺杂Sn2P2S6的近红外光折变性能增强

T. Bach, M. Jazbinšek, G. Montemezzani, P. Günter, A. Grabar, I. Stoika, Y. Vysochanskii
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摘要

研究了不同类型的铁电光折变Sn2P2S6在不同波长下的红、红外光谱。研究表明,改变生长条件和掺杂Te可以有效地改善Sn2P2S6的光折变性能。与传统的“黄色”Sn2P2S6相比,te掺杂Sn2P2S6的光折变双光束耦合增益增加,在633 nm波长处增加17 cm-1,在860 nm波长处增加7 cm-1,而在633 nm波长处增加4-7 cm-1,在860 nm波长处增加2 cm-1。我们证明了te掺杂Sn2P2S6在780 nm环腔方案下的自泵浦相位共轭,在2 W/cm2泵浦强度下,反射率在相对较短的上升时间内高达30%,上升时间小于50 ms。
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Enhanced near-infrared photorefractive properties of Te-doped Sn2P2S6
We investigate different types of ferroelectric photorefractive Sn2P2S6 at different wavelengths in the red and infrared. We show that modifying the growth conditions and doping with Te can efficiently improve the photorefractive properties of Sn2P2S6. Photorefractive two-beam coupling gain increases for Te-doped Sn2P2S6, up to 17 cm-1 at a wavelength of 633 nm and up to 7 cm-1 at 860 nm, compared to conventional "yellow" Sn2P2S6 which has a gain of 4-7 cm-1 at 633 nm and 2 cm-1 at 860 nm. We demonstrate self-pumped phase conjugation in ring cavity scheme at 780 nm for Te-doped Sn2P2S6 with a reflectivity of up to 30% in a relatively short rise time of less than 50 ms for 2 W/cm2 pump intensity.
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