沟槽MOSFET制造技术中硅深各向异性刻蚀的特点

Rocket-Space Device Engineering and Information Systems Pub Date : 2015-12-01 DOI:10.17238/ISSN2409-0239.2015.4.66

A. E. Anurov, Yu. M. Zabotin, S. G. Podgorodetsky

{"title":"沟槽MOSFET制造技术中硅深各向异性刻蚀的特点","authors":"A. E. Anurov, Yu. M. Zabotin, S. G. Podgorodetsky","doi":"10.17238/ISSN2409-0239.2015.4.66","DOIUrl":null,"url":null,"abstract":"Operation of gate trench etching for vertical power MOSFET manufacturing technology is considered and investigation results are shown as dependences of trench geometry from etch parameters and as parameters of the final etch regime in this paper. It is shown that gas flows’ proportional change has a little effect on the etch regime and the trench form, and etch time to deposition time ratio has a strong influence on the wall slope and the bottom roughness.","PeriodicalId":436954,"journal":{"name":"Rocket-Space Device Engineering and Information Systems","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Specifics of Silicon Deep Anisotropic Etching in Trench MOSFET Manufacturing Technology\",\"authors\":\"A. E. Anurov, Yu. M. Zabotin, S. G. Podgorodetsky\",\"doi\":\"10.17238/ISSN2409-0239.2015.4.66\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Operation of gate trench etching for vertical power MOSFET manufacturing technology is considered and investigation results are shown as dependences of trench geometry from etch parameters and as parameters of the final etch regime in this paper. It is shown that gas flows’ proportional change has a little effect on the etch regime and the trench form, and etch time to deposition time ratio has a strong influence on the wall slope and the bottom roughness.\",\"PeriodicalId\":436954,\"journal\":{\"name\":\"Rocket-Space Device Engineering and Information Systems\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Rocket-Space Device Engineering and Information Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.17238/ISSN2409-0239.2015.4.66\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Rocket-Space Device Engineering and Information Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.17238/ISSN2409-0239.2015.4.66","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文考虑了垂直功率MOSFET制造技术中栅极沟槽刻蚀的操作，并将研究结果显示为沟槽几何形状与刻蚀参数的依赖关系以及最终刻蚀状态的参数。结果表明:气流比例变化对蚀刻状态和沟槽形状影响不大，而蚀刻时间与沉积时间之比对壁面坡度和底部粗糙度影响较大。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Specifics of Silicon Deep Anisotropic Etching in Trench MOSFET Manufacturing Technology

Operation of gate trench etching for vertical power MOSFET manufacturing technology is considered and investigation results are shown as dependences of trench geometry from etch parameters and as parameters of the final etch regime in this paper. It is shown that gas flows’ proportional change has a little effect on the etch regime and the trench form, and etch time to deposition time ratio has a strong influence on the wall slope and the bottom roughness.

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Rocket-Space Device Engineering and Information Systems

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